# BFP640H6327

**Infineon Technologies** · Bipolar (BJT) · SOT-343

BFP640H6327 from Infineon Technologies, in a SOT-343. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal; the datasheet gives an absolute maximum base current IB of 3 mA. |
| 2 | E | passive | Emitter terminal; the emitter lead is the reference for the soldering point temperature TS (max 90 °C for Ptot 200 mW) and the emitter-base voltage VEBO is limited to 1.2 V. |
| 3 | C | passive | Collector terminal; the absolute maximum collector-emitter voltage VCEO is 4.1 V (open base) and collector current IC is 50 mA. |
| 4 | E | passive | Emitter terminal (second emitter lead, same electrical node as pin 2); the emitter lead is the reference for the soldering point temperature TS. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-343 |
| Category | Transistors/Thyristors |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector emitter breakdown voltage | V(BR)CEO | 4.1 | 4.7 |  | V | IC = 1 mA, IB = 0, open base | 5 |
| Collector emitter leakage current | ICES |  | 1 | 400 | nA | VCE = 13 V, VBE = 0, E-B short circuited | 5 |
| Collector emitter leakage current | ICES |  | 1 | 40 | nA | VCE = 5 V, VBE = 0, E-B short circuited | 5 |
| Collector base leakage current | ICBO |  | 1 | 40 | nA | VCB = 5 V, IE = 0, open emitter | 5 |
| Emitter base leakage current | IEBO |  | 1 | 40 | nA | VEB = 0.5 V, IC = 0, open collector | 5 |
| DC current gain | hFE | 110 | 180 | 270 |  | VCE = 3 V, IC = 30 mA, pulse measured | 5 |
| Collector emitter voltage | VCEO |  |  | 4.1 | V | Open base | 3 |
| Collector emitter voltage | VCEO |  |  | 3.6 | V | TA = -55 °C, open base | 3 |
| Collector emitter voltage | VCES |  |  | 13 | V | E-B short circuited | 3 |
| Collector base voltage | VCBO |  |  | 13 | V | Open emitter | 3 |
| Emitter base voltage | VEBO |  |  | 1.2 | V | Open collector | 3 |
| Base current | IB |  |  | 3 | mA |  | 3 |
| Collector current | IC |  |  | 50 | mA |  | 3 |
| Total power dissipation | Ptot |  |  | 200 | mW | TS ≤ 90 °C | 3 |
| Junction temperature | TJ |  |  | 150 | °C |  | 3 |
| Storage temperature | TStg | -55 |  |  | °C |  | 3 |
| Junction - soldering point thermal resistance | RthJS |  | 300 |  | K/W |  | 4 |

## CAD (KiCad official)

- Symbol: `BFP640H6327`
- Footprint: `Package_TO_SOT_SMD:SOT-343_SC-70-4`
- 3D model: SOT-343 (KiCad packages3D, STEP)
- 3D model files: `bfp640h6327-etched.step` / `bfp640h6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bfp640h6327.step` / `bfp640h6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911504183726080) (21 pp, sha256 `a2a7139ce0029f38`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bfp640h6327-datasheet.pdf)