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BFP640H6327

Infineon Technologies · Bipolar (BJT) · SOT-343

BFP640H6327 from Infineon Technologies, in a SOT-343. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base terminal; the datasheet gives an absolute maximum base current IB of 3 mA.
2	E	passive	Emitter terminal; the emitter lead is the reference for the soldering point temperature TS (max 90 °C for Ptot 200 mW) and the emitter-base voltage VEBO is limited to 1.2 V.
3	C	passive	Collector terminal; the absolute maximum collector-emitter voltage VCEO is 4.1 V (open base) and collector current IC is 50 mA.
4	E	passive	Emitter terminal (second emitter lead, same electrical node as pin 2); the emitter lead is the reference for the soldering point temperature TS.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	SOT-343
Category	Transistors/Thyristors
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector emitter breakdown voltage	V(BR)CEO	4.1	4.7		V	IC = 1 mA, IB = 0, open base	5
Collector emitter leakage current	ICES		1	400	nA	VCE = 13 V, VBE = 0, E-B short circuited	5
Collector emitter leakage current	ICES		1	40	nA	VCE = 5 V, VBE = 0, E-B short circuited	5
Collector base leakage current	ICBO		1	40	nA	VCB = 5 V, IE = 0, open emitter	5
Emitter base leakage current	IEBO		1	40	nA	VEB = 0.5 V, IC = 0, open collector	5
DC current gain	hFE	110	180	270		VCE = 3 V, IC = 30 mA, pulse measured	5
Collector emitter voltage	VCEO			4.1	V	Open base	3
Collector emitter voltage	VCEO			3.6	V	TA = -55 °C, open base	3
Collector emitter voltage	VCES			13	V	E-B short circuited	3
Collector base voltage	VCBO			13	V	Open emitter	3
Emitter base voltage	VEBO			1.2	V	Open collector	3
Base current	IB			3	mA		3
Collector current	IC			50	mA		3
Total power dissipation	Ptot			200	mW	TS ≤ 90 °C	3
Junction temperature	TJ			150	°C		3
Storage temperature	TStg	-55			°C		3
Junction - soldering point thermal resistance	RthJS		300		K/W		4

CAD (KiCad official)

Symbol: BFP640H6327
Footprint: Package_TO_SOT_SMD:SOT-343_SC-70-4
3D model: SOT-343 (KiCad packages3D, STEP)
3D model files: bfp640h6327-etched.step / bfp640h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfp640h6327.step / bfp640h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (21 pp, sha256 a2a7139ce0029f38, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF