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Ray bfp420h6327: specified limits as data (metadata.characteristics, 25 rows from the datasheet) 2d7ff53 24d ago

BFP420H6327

Infineon Technologies · Bipolar (BJT) · SOT-343

BFP420H6327 from Infineon Technologies, in a SOT-343. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal for biasing and RF signal input; maximum base current 9 mA.
2 E power_in Emitter terminal for DC and RF return path; maximum reverse emitter-base voltage VEBO of 1.5 V.
3 C output Collector terminal for RF signal output; maximum collector current IC of 60 mA at VCEO of 4.5 V open base.
4 E power_in Emitter terminal for DC and RF return path; maximum reverse emitter-base voltage VEBO of 1.5 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-343
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector emitter voltage (open base) VCEO 4.5 V Open base 3
Collector emitter voltage (TA = -55 °C) VCEO 4.1 V TA = -55 °C, open base 3
Collector emitter voltage (E-B short circuited) VCES 15 V E-B short circuited 3
Collector base voltage VCBO 15 V Open emitter 3
Emitter base voltage VEBO 1.5 V Open collector 3
Base current IB 9 mA 3
Collector current IC 60 mA 3
Total power dissipation Ptot 210 mW TS ≤ 98 °C 3
Junction temperature TJ 150 °C 3
Storage temperature TStg -55 °C 3
Collector emitter breakdown voltage V(BR)CEO 4.5 5 V IC = 1 mA, IB = 0, open base 6
Collector emitter leakage current ICES 10 μA VCE = 15 V, VBE = 0, E-B short circuited 6
Collector base leakage current ICBO 100 nA VCB = 5 V, IE = 0, open emitter 6
Emitter base leakage current IEBO 3 μA VEB = 0.5 V, IC = 0, open collector 6
DC current gain hFE 60 95 130 VCE = 4 V, IC = 20 mA, pulse measured 6
Transition frequency fT 18 25 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz 6
Collector base capacitance CCB 0.15 0.3 pF VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded 6
Transducer gain /S21/² 14 17 dB IC = 20 mA 7
Thermal resistance junction - soldering point RthJS 250 K/W 4
Maximum power gain Gms 21 dB IC = 20 mA 7
Collector emitter capacitance CCE 0.37 pF VCE = 2 V, VBE = 0, f = 1 MHz, base grounded 6
Emitter base capacitance CEB 0.55 pF VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded 6
Minimum noise figure NFmin 1.1 dB IC = 5 mA 7
3rd order intercept point at output OIP3 22 dBm IC = 20 mA, ZS = ZL = 50 Ω 7
1 dB gain compression point at output OP1dB 12 dBm 7

CAD (KiCad official)

  • Symbol: BFP420H6327
  • Footprint: Package_TO_SOT_SMD:SOT-343_SC-70-4
  • 3D model: SOT-343 (KiCad packages3D, STEP)
  • 3D model files: bfp420h6327-etched.step / bfp420h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfp420h6327.step / bfp420h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (18 pp, sha256 d8ef01d0f74643bf, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF