BFP420H6327 - Commit

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bfp420h6327: specified limits as data (metadata.characteristics, 25 rows from the datasheet)

Ray ·2d7ff53c5a ·24d ago ·parent eeb6998

2 files changed +339

README.md+32 page.json+307

README.md+32

@@ -22,6 +22,38 @@ BFP420H6327 from Infineon Technologies, in a SOT-343. Pinout and pin description | Category | Transistors/Thyristors | | Pins | 4 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector emitter voltage (open base) | VCEO |  |  | 4.5 | V | Open base | 3 |+| Collector emitter voltage (TA = -55 °C) | VCEO |  |  | 4.1 | V | TA = -55 °C, open base | 3 |+| Collector emitter voltage (E-B short circuited) | VCES |  |  | 15 | V | E-B short circuited | 3 |+| Collector base voltage | VCBO |  |  | 15 | V | Open emitter | 3 |+| Emitter base voltage | VEBO |  |  | 1.5 | V | Open collector | 3 |+| Base current | IB |  |  | 9 | mA |  | 3 |+| Collector current | IC |  |  | 60 | mA |  | 3 |+| Total power dissipation | Ptot |  |  | 210 | mW | TS ≤ 98 °C | 3 |+| Junction temperature | TJ |  |  | 150 | °C |  | 3 |+| Storage temperature | TStg | -55 |  |  | °C |  | 3 |+| Collector emitter breakdown voltage | V(BR)CEO | 4.5 | 5 |  | V | IC = 1 mA, IB = 0, open base | 6 |+| Collector emitter leakage current | ICES |  |  | 10 | μA | VCE = 15 V, VBE = 0, E-B short circuited | 6 |+| Collector base leakage current | ICBO |  |  | 100 | nA | VCB = 5 V, IE = 0, open emitter | 6 |+| Emitter base leakage current | IEBO |  |  | 3 | μA | VEB = 0.5 V, IC = 0, open collector | 6 |+| DC current gain | hFE | 60 | 95 | 130 |  | VCE = 4 V, IC = 20 mA, pulse measured | 6 |+| Transition frequency | fT | 18 | 25 |  | GHz | VCE = 3 V, IC = 30 mA, f = 2 GHz | 6 |+| Collector base capacitance | CCB |  | 0.15 | 0.3 | pF | VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded | 6 |+| Transducer gain | /S21/² | 14 | 17 |  | dB | IC = 20 mA | 7 |+| Thermal resistance junction - soldering point | RthJS |  | 250 |  | K/W |  | 4 |+| Maximum power gain | Gms |  | 21 |  | dB | IC = 20 mA | 7 |+| Collector emitter capacitance | CCE |  | 0.37 |  | pF | VCE = 2 V, VBE = 0, f = 1 MHz, base grounded | 6 |+| Emitter base capacitance | CEB |  | 0.55 |  | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded | 6 |+| Minimum noise figure | NFmin |  | 1.1 |  | dB | IC = 5 mA | 7 |+| 3rd order intercept point at output | OIP3 |  | 22 |  | dBm | IC = 20 mA, ZS = ZL = 50 Ω | 7 |+| 1 dB gain compression point at output | OP1dB |  | 12 |  | dBm |  | 7 |+ ## CAD (KiCad official)  - Symbol: `BFP420H6327`

page.json+307

@@ -139,6 +139,313 @@       "Package": "SOT-343",       "Category": "Transistors/Thyristors",       "Pins": "4"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "d8ef01d0f74643bf",+      "rows": [+        {+          "name": "Collector emitter voltage (open base)",+          "symbol": "VCEO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 4.5,+          "conditions": "Open base",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Collector emitter voltage (TA = -55 °C)",+          "symbol": "VCEO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 4.1,+          "conditions": "TA = -55 °C, open base",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Collector emitter voltage (E-B short circuited)",+          "symbol": "VCES",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "E-B short circuited",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Collector base voltage",+          "symbol": "VCBO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "Open emitter",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Emitter base voltage",+          "symbol": "VEBO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.5,+          "conditions": "Open collector",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Base current",+          "symbol": "IB",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 9,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Collector current",+          "symbol": "IC",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 60,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 210,+          "conditions": "TS ≤ 98 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Junction temperature",+          "symbol": "TJ",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": null,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature",+          "symbol": "TStg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": null,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Collector emitter breakdown voltage",+          "symbol": "V(BR)CEO",+          "kind": "electrical",+          "unit": "V",+          "min": 4.5,+          "typ": 5,+          "max": null,+          "conditions": "IC = 1 mA, IB = 0, open base",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Collector emitter leakage current",+          "symbol": "ICES",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "VCE = 15 V, VBE = 0, E-B short circuited",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Collector base leakage current",+          "symbol": "ICBO",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VCB = 5 V, IE = 0, open emitter",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Emitter base leakage current",+          "symbol": "IEBO",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 3,+          "conditions": "VEB = 0.5 V, IC = 0, open collector",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "DC current gain",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "",+          "min": 60,+          "typ": 95,+          "max": 130,+          "conditions": "VCE = 4 V, IC = 20 mA, pulse measured",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Transition frequency",+          "symbol": "fT",+          "kind": "electrical",+          "unit": "GHz",+          "min": 18,+          "typ": 25,+          "max": null,+          "conditions": "VCE = 3 V, IC = 30 mA, f = 2 GHz",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Collector base capacitance",+          "symbol": "CCB",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 0.15,+          "max": 0.3,+          "conditions": "VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Transducer gain",+          "symbol": "|S21|²",+          "kind": "electrical",+          "unit": "dB",+          "min": 14,+          "typ": 17,+          "max": null,+          "conditions": "IC = 20 mA",+          "source_page": 7,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction - soldering point",+          "symbol": "RthJS",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": 250,+          "max": null,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Maximum power gain",+          "symbol": "Gms",+          "kind": "electrical",+          "unit": "dB",+          "min": null,+          "typ": 21,+          "max": null,+          "conditions": "IC = 20 mA",+          "source_page": 7,+          "source": "datasheet"+        },+        {+          "name": "Collector emitter capacitance",+          "symbol": "CCE",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 0.37,+          "max": null,+          "conditions": "VCE = 2 V, VBE = 0, f = 1 MHz, base grounded",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Emitter base capacitance",+          "symbol": "CEB",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 0.55,+          "max": null,+          "conditions": "VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Minimum noise figure",+          "symbol": "NFmin",+          "kind": "electrical",+          "unit": "dB",+          "min": null,+          "typ": 1.1,+          "max": null,+          "conditions": "IC = 5 mA",+          "source_page": 7,+          "source": "datasheet"+        },+        {+          "name": "3rd order intercept point at output",+          "symbol": "OIP3",+          "kind": "electrical",+          "unit": "dBm",+          "min": null,+          "typ": 22,+          "max": null,+          "conditions": "IC = 20 mA, ZS = ZL = 50 Ω",+          "source_page": 7,+          "source": "datasheet"+        },+        {+          "name": "1 dB gain compression point at output",+          "symbol": "OP1dB",+          "kind": "electrical",+          "unit": "dBm",+          "min": null,+          "typ": 12,+          "max": null,+          "conditions": "",+          "source_page": 7,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],