component

BD82006FVJ-MGE2

Public Made by Adom

by adom

ROHM Semicon Power Distribution Switches, MSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BD82006FVJ-MGE2

ROHM Semicon · Power Distribution Switches · MSOP-8

BD82006FVJ-MGE2 from ROHM Semicon, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground reference pin for the IC.
2 IN power_in Switch input and supply voltage for the IC, operating range 2.7 V to 5.5 V; connect pins 2 and 3 together.
3 IN power_in Switch input and supply voltage for the IC, operating range 2.7 V to 5.5 V; connect pins 2 and 3 together.
4 EN input Active-high enable input for this BD82006FVJ-M variant: a high level above 2.0 V turns the switch on and a low level below 0.8 V turns it off.
5 /OC output Open-drain fault flag output that goes low during over-current or over-temperature; sink current is limited to 5 mA absolute maximum and it should be pulled up with 10 kΩ to 100 kΩ.
6 OUT power_out Power switch output (MOSFET source); connect pins 6, 7 and 8 together; absolute maximum VOUT is -0.3 to +6.0 V.
7 OUT power_out Power switch output (MOSFET source); connect pins 6, 7 and 8 together; absolute maximum VOUT is -0.3 to +6.0 V.
8 OUT power_out Power switch output (MOSFET source); connect pins 6, 7 and 8 together; absolute maximum VOUT is -0.3 to +6.0 V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package MSOP-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Current IDD 110 160 μA VEN = 5V , OUT=OPEN 3
Standby Current ISTB 0.01 1 μA VEN = 0V , OUT=OPEN 3
EN Input Voltage High Input VENH 2 V High Input 3
EN Input Voltage Low Input VENL 0.8 V Low Input 3
EN Input Current IEN -1 0.01 1 μA VEN = 0V or VEN = 5V 3
/OC Output Low Voltage V/OCL 0.5 V I/OC = 0.5mA 3
/OC Output Leak Current IL/OC 0.01 1 μA V/OC = 5V 3
/OC Delay Time t/OC 10 15 20 ms 3
ON-Resistance RON 70 110 mΩ IOUT = 500mA 3
Switch Leak Current ILSW 1 μA VEN = 0V, VOUT = 0V 3
Reverse Leak Current ILREV 1 μA VOUT = 5.5V, VIN = 0V 3
Current Limit Threshold ITH 1.5 2.4 3 A 3
Short Circuit Current ISC 1.1 1.5 2.1 A VOUT = 0V; CL = 47μF (RMS) 3
Output Rise Time tON1 0.8 10 ms RL = 10Ω 3
Output Turn ON Time tON2 1.1 20 ms RL = 10Ω 3
Output Fall Time tOFF1 5 20 μs RL = 10Ω 3
Output Turn OFF Time tOFF2 10 40 μs RL = 10Ω 3
UVLO Threshold Increasing VTUVH 2.1 2.3 2.5 V VIN Increasing 3
UVLO Threshold Decreasing VTUVL 2 2.2 2.4 V VIN Decreasing 3
Operating Voltage VIN 2.7 5.5 V 3
Operating Temperature Topr -40 85 °C 3
Supply Voltage VIN -0.3 6 V 3
Enable Input Voltage VEN, V/EN -0.3 6 V 3
/OC Voltage V/OC -0.3 6 V 3
/OC Sink Current I/OC 5 mA 3
OUT Voltage VOUT -0.3 6 V 3
Storage Temperature Tstg -55 150 °C 3
Power Dissipation Pd 0.58 W Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 4.7mW/°C above Ta=25°C 3

CAD (KiCad official)

  • Symbol: BD82006FVJ-MGE2
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: bd82006fvj-mge2-etched.step / bd82006fvj-mge2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bd82006fvj-mge2.step / bd82006fvj-mge2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (26 pp, sha256 ad68789985e93121, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF