component
BCZ120N160W1
Public Made by Adomby adom
Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
bcz120n160w1: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding)
3a3a67b
29d ago
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{
"schema_version": 1,
"type": "component",
"slug": "bcz120n160w1",
"title": "BCZ120N160W1",
"brief": "Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
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"component": {
"mpn": "BCZ120N160W1",
"manufacturer": "Bestirpower",
"package": "TO-247-4L",
"pin_count": 4,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/4a0a2ca22a67003002ecc33a09d17d7d.pdf",
"parts": {
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"footprint": "bcz120n160w1.kicad_mod",
"model_3d": "bcz120n160w1-etched.glb",
"model_3d_plain": "bcz120n160w1.glb",
"model_3d_step": "bcz120n160w1-etched.step",
"model_3d_step_plain": "bcz120n160w1.step",
"lbr": "bcz120n160w1.lbr"
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"distributor_links": {
"lcsc": "C42401701"
},
"pins": [
{
"number": "1",
"name": "Drain",
"type": "passive",
"description": "Drain terminal; absolute maximum voltage VDS(max) = 1200 V at VGS = 0 V; continuous drain current 22 A at TC = 25°C."
},
{
"number": "2",
"name": "Source",
"type": "power_in",
"description": "Power source terminal providing return path for drain current."
},
{
"number": "3",
"name": "Source",
"type": "power_in",
"description": "Source terminal; parallel connection with pin 2 for current distribution."
},
{
"number": "4",
"name": "Gate",
"type": "input",
"description": "Gate control terminal; recommended operational voltage range -5 V to +18 V."
}
],
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"primary_model": "claude-haiku-4-5-20251001",
"primary_mode": "text",
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"guards": "pin_guards 0.1: passed",
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"cost_usd": 0.1227,
"at": "2026-09-17T17:20:27"
},
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"pages": 8,
"sha256": "7306698998d12d21",
"source_tier": "lcsc"
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"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
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"refuses_to_fabricate": true
}
},
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"footprint": "viewers/footprint.html"
},
"models_3d": [
{
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"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "976ae560ee073c7450ef39d3d2fc3006e5eed9c51132093905f3e98066a0fc8d",
"checked": "2026-10-07",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
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"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
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15.9,
5.03,
41.1
],
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"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "6a5c53289a6c8039660484fd61a032a88994cb83dcdeb938c8bb6bd421d33c41",
"checked": "2026-10-07",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Bestirpower",
"Package": "TO-247-4L",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "4"
}
},
"variants": [],
"sections": [
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"discovery_triggers": [
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"discovery_pitch": "BCZ120N160W1 (Bestirpower) component page with datasheet-verified CAD.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
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"path": "docs/hero.png"
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"files": [
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"docs/hero.png",
"docs/bcz120n160w1-datasheet.pdf",
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"visibility": {
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},
"updated_at": "2026-09-24T17:41:14.708Z"
}