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Contents

README

markdown

BCZ120N160W1

Bestirpower · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

BCZ120N160W1 from Bestirpower, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal; absolute maximum voltage VDS(max) = 1200 V at VGS = 0 V; continuous drain current 22 A at TC = 25°C.
2 Source power_in Power source terminal providing return path for drain current.
3 Source power_in Source terminal; parallel connection with pin 2 for current distribution.
4 Gate input Gate control terminal; recommended operational voltage range -5 V to +18 V.

Key specifications

Parameter Value
Manufacturer Bestirpower
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

CAD (KiCad official)

  • Symbol: BCZ120N160W1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: bcz120n160w1-etched.step / bcz120n160w1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcz120n160w1.step / bcz120n160w1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bestirpower datasheet (8 pp, sha256 7306698998d12d21, retrieved 2026-09-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF