component
BCZ120N160W1
Public Made by Adomby adom
Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Datasheet-verified pinout, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCZ120N160W1
Bestirpower · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L
BCZ120N160W1 from Bestirpower, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal; absolute maximum voltage VDS(max) = 1200 V at VGS = 0 V; continuous drain current 22 A at TC = 25°C. |
| 2 | Source | power_in | Power source terminal providing return path for drain current. |
| 3 | Source | power_in | Source terminal; parallel connection with pin 2 for current distribution. |
| 4 | Gate | input | Gate control terminal; recommended operational voltage range -5 V to +18 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
CAD (KiCad official)
- Symbol:
BCZ120N160W1 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
bcz120n160w1-etched.step/bcz120n160w1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcz120n160w1.step/bcz120n160w1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (8 pp, sha256
7306698998d12d21, retrieved 2026-09-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).