# BCZ120N160W1

**Bestirpower** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

BCZ120N160W1 from Bestirpower, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal; absolute maximum voltage VDS(max) = 1200 V at VGS = 0 V; continuous drain current 22 A at TC = 25°C. |
| 2 | Source | power_in | Power source terminal providing return path for drain current. |
| 3 | Source | power_in | Source terminal; parallel connection with pin 2 for current distribution. |
| 4 | Gate | input | Gate control terminal; recommended operational voltage range -5 V to +18 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |

## CAD (KiCad official)

- Symbol: `BCZ120N160W1`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `bcz120n160w1-etched.step` / `bcz120n160w1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcz120n160w1.step` / `bcz120n160w1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Bestirpower datasheet](docs/bcz120n160w1-datasheet.pdf) (8 pp, sha256 `7306698998d12d21`, retrieved 2026-09-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bcz120n160w1-datasheet.pdf)