# BCX70JE6433-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

BCX70JE6433-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; the drive terminal of the NPN transistor, with VEBO max 5 V and hFE typ 200 at VCE=6V, IC=1mA. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet gives a VEBO limit of 5 V. |
| 3 | C | passive | Collector of the NPN transistor; VCEO max 50 V, VCBO max 60 V, IC max 100 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 60 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 50 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector Current | IC |  |  | 100 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 200 | mW |  | 1 |
| Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  |  | 625 | ℃/W |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 60 |  |  | V | IC=100μA,IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 |  |  | V | IC=1mA,IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100μA,IC=0 | 2 |
| Collector cut-off current | ICBO |  |  | 0.1 | μA | VCB=60V,IE=0 | 2 |
| Emitter cut-off current | IEBO |  |  | 0.1 | μA | VEB=5V,IC=0 | 2 |
| DC current gain | hFE |  | 200 | 400 |  | VCE=6V,IC=1mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.3 | V | IC=100mA,IB=10mA | 2 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1 | V | IC=100mA,IB=10mA | 2 |
| Transition frequency | fT |  | 250 |  | MHz | VCE=6V,IC=10mA | 2 |

## CAD (KiCad official)

- Symbol: `BCX70JE6433-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bcx70je6433-hxy-etched.step` / `bcx70je6433-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcx70je6433-hxy.step` / `bcx70je6433-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604445624759185408) (5 pp, sha256 `ac7602838e83a80d`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bcx70je6433-hxy-datasheet.pdf)