main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers bcx70je6433-hxy: viewers · Ray 8d ago
bcx70je6433-hxy-etched.glb Publish 0.1.0 · Ray 8d ago
bcx70je6433-hxy-etched.step bcx70je6433-hxy: factory component page (tier=lcsc) · Ray 8d ago
bcx70je6433-hxy-hero.glb bcx70je6433-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
bcx70je6433-hxy-hero.overlay.json Publish 0.1.0 · Ray 8d ago
bcx70je6433-hxy.glb Publish 0.1.0 · Ray 8d ago
bcx70je6433-hxy.kicad_mod Publish 0.1.0 · Ray 8d ago
bcx70je6433-hxy.kicad_sym Publish 0.1.0 · Ray 8d ago
bcx70je6433-hxy.lbr Publish 0.1.0 · Ray 8d ago
bcx70je6433-hxy.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago

BCX70JE6433-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

BCX70JE6433-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; the drive terminal of the NPN transistor, with VEBO max 5 V and hFE typ 200 at VCE=6V, IC=1mA.
2 E passive Emitter of the NPN transistor; the datasheet gives a VEBO limit of 5 V.
3 C passive Collector of the NPN transistor; VCEO max 50 V, VCBO max 60 V, IC max 100 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V 1
Collector-Emitter Voltage VCEO 50 V 1
Emitter-Base Voltage VEBO 5 V 1
Collector Current IC 100 mA 1
Collector Power Dissipation PC 200 mW 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 1
Collector-base breakdown voltage V(BR)CBO 60 V IC=100μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA,IC=0 2
Collector cut-off current ICBO 0.1 μA VCB=60V,IE=0 2
Emitter cut-off current IEBO 0.1 μA VEB=5V,IC=0 2
DC current gain hFE 200 400 VCE=6V,IC=1mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=100mA,IB=10mA 2
Base-emitter saturation voltage VBE(sat) 1 V IC=100mA,IB=10mA 2
Transition frequency fT 250 MHz VCE=6V,IC=10mA 2

CAD (KiCad official)

  • Symbol: BCX70JE6433-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcx70je6433-hxy-etched.step / bcx70je6433-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcx70je6433-hxy.step / bcx70je6433-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 ac7602838e83a80d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF