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Ray Publish 0.1.0 46ec2f3 1d ago

BCX55-16-JSM

JSMSEMI · Bipolar (BJT) · SOT-89

BCX55-16-JSM from JSMSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; the datasheet rates DC base current at 100 mA and peak base current at 200 mA, with emitter-base voltage limited to 5 V.
2 EMITTER passive Emitter of the NPN transistor; the datasheet gives emitter-base breakdown V(BR)EBO of 5 V minimum at IE=10 µA.
3 COLLECTOR passive Collector of the NPN transistor, connected to the center tab; the datasheet rates BCX55 VCEO at 60 V and VCBO at 60 V, with DC collector current of 1 A and peak collector current of 1.5 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage (BCX55 column) VCEO 60 V 1
Collector-base voltage (BCX55 column) VCBO 60 V 1
Emitter-base voltage VEBO 5 V 1
DC collector current IC 1 A 1
Peak collector current ICM 1.5 A 1
Base current IB 100 mA 1
Peak base current IBM 200 mA 1
Total power dissipation Ptot 500 mW TS=130℃ 1
Junction and storage temperature Tj,Tstg -65 150 ℃ 1
Collector-base breakdown voltage (BCX55) V(BR)CBO 60 V IC=100μA IB=0 2
Collector-emitter breakdown voltage (BCX55) V(BR)CEO 60 V IC=10mA IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=10μA IC=0 2
Collector cut-off current ICBO 100 nA VCB=30V IE=0 2
Collector cut-off current at high temperature ICBO 20 μA VCB=30V IE=0, TA=150℃ 2
DC current gain hFE 25 VCE=2V IC=5mA 2
DC current gain (-16 group) hFE 100 250 VCE=2V IC=150mA 2
DC current gain (BCX54…56 row) hFE 40 250 VCE=2V IC=150mA 2
Collector-emitter saturation voltage VCE(sat) 0.5 V IC=500mA IB=50mA 2
Base-emitter voltage VBE 1 V IC=500mA, VCE=2V 2

CAD (KiCad official)

  • Symbol: BCX55-16-JSM
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: bcx55-16-jsm-etched.step / bcx55-16-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcx55-16-jsm.step / bcx55-16-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (5 pp, sha256 9172f3cc368eb650, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF