component
BCX55-16-JSM
Public Made by Adomby adom
JSMSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| bcx55-16-jsm-etched.glb | 1d ago |
| bcx55-16-jsm-etched.step | 1d ago |
| bcx55-16-jsm-hero.glb | 1d ago |
| bcx55-16-jsm-hero.overlay.json | 1d ago |
| bcx55-16-jsm.glb | 1d ago |
| bcx55-16-jsm.kicad_mod | 1d ago |
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| bcx55-16-jsm.lbr | 1d ago |
| bcx55-16-jsm.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
BCX55-16-JSM
JSMSEMI · Bipolar (BJT) · SOT-89
BCX55-16-JSM from JSMSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor; the datasheet rates DC base current at 100 mA and peak base current at 200 mA, with emitter-base voltage limited to 5 V. |
| 2 | EMITTER | passive | Emitter of the NPN transistor; the datasheet gives emitter-base breakdown V(BR)EBO of 5 V minimum at IE=10 µA. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor, connected to the center tab; the datasheet rates BCX55 VCEO at 60 V and VCBO at 60 V, with DC collector current of 1 A and peak collector current of 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (BCX55 column) | VCEO | 60 | V | 1 | |||
| Collector-base voltage (BCX55 column) | VCBO | 60 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| DC collector current | IC | 1 | A | 1 | |||
| Peak collector current | ICM | 1.5 | A | 1 | |||
| Base current | IB | 100 | mA | 1 | |||
| Peak base current | IBM | 200 | mA | 1 | |||
| Total power dissipation | Ptot | 500 | mW | TS=130℃ | 1 | ||
| Junction and storage temperature | Tj,Tstg | -65 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage (BCX55) | V(BR)CBO | 60 | V | IC=100μA IB=0 | 2 | ||
| Collector-emitter breakdown voltage (BCX55) | V(BR)CEO | 60 | V | IC=10mA IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10μA IC=0 | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=30V IE=0 | 2 | ||
| Collector cut-off current at high temperature | ICBO | 20 | μA | VCB=30V IE=0, TA=150℃ | 2 | ||
| DC current gain | hFE | 25 | VCE=2V IC=5mA | 2 | |||
| DC current gain (-16 group) | hFE | 100 | 250 | VCE=2V IC=150mA | 2 | ||
| DC current gain (BCX54…56 row) | hFE | 40 | 250 | VCE=2V IC=150mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=500mA IB=50mA | 2 | ||
| Base-emitter voltage | VBE | 1 | V | IC=500mA, VCE=2V | 2 |
CAD (KiCad official)
- Symbol:
BCX55-16-JSM - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
bcx55-16-jsm-etched.step/bcx55-16-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx55-16-jsm.step/bcx55-16-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (5 pp, sha256
9172f3cc368eb650, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).