BCW120N160W1

{
  "schema_version": 1,
  "type": "component",
  "slug": "bcw120n160w1",
  "title": "BCW120N160W1",
  "brief": "Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "BCW120N160W1",
    "manufacturer": "Bestirpower",
    "package": "TO-247-3L",
    "pin_count": 3,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/4a4b7d1cbf32a956f96b2f4fb247be98.pdf",
    "parts": {
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      "footprint": "bcw120n160w1.kicad_mod",
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      "lbr": "bcw120n160w1.lbr"
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    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Controls the MOSFET channel. Recommended drive VGS = -5 V / +18 V; absolute maximum VGS = -8 V / +22 V. Threshold voltage VGS(th) = 2.0-4.0 V (typ 3.4 V) at ID=5 mA, TC=25°C. Internal gate resistance RG(int) = 10 Ω typ."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. High-voltage power terminal, connected internally to the exposed metal tab/heatsink. VDSS = 1200 V max, ID = 22 A at TC=25°C (16 A at TC=100°C), IDM (pulsed) = 58 A. Body diode: VSD ~3.7 V typ at 5 A, TJ=25°C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. Return terminal for drain current and gate-drive reference. Static RDS(on) = 160 mΩ typ (VGS=15 V) / 130 mΩ typ (VGS=18 V) at ID=10 A, TC=25°C."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
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        "pages": 8,
        "sha256": "f84e39beaeb8e160",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          15.9,
          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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      {
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        "role": "eda",
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        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
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        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "a88d0ac9970d8302e4e719a55e46685709685a983c8e7fa1325edef07c73a82b",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Bestirpower",
      "Package": "TO-247-3L",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "3"
    }
  },
  "variants": [
    {
      "mpn": "BCW120N160W1",
      "kind": "packaging"
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  "sections": [
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  "discovery_pitch": "BCW120N160W1 (Bestirpower) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "updated_at": "2026-09-24T17:40:35.252Z"
}