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Contents

README

markdown

BCW120N160W1

Bestirpower · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L

BCW120N160W1 from Bestirpower, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Controls the MOSFET channel. Recommended drive VGS = -5 V / +18 V; absolute maximum VGS = -8 V / +22 V. Threshold voltage VGS(th) = 2.0-4.0 V (typ 3.4 V) at ID=5 mA, TC=25°C. Internal gate resistance RG(int) = 10 Ω typ.
2 D passive Drain. High-voltage power terminal, connected internally to the exposed metal tab/heatsink. VDSS = 1200 V max, ID = 22 A at TC=25°C (16 A at TC=100°C), IDM (pulsed) = 58 A. Body diode: VSD ~3.7 V typ at 5 A, TJ=25°C.
3 S passive Source. Return terminal for drain current and gate-drive reference. Static RDS(on) = 160 mΩ typ (VGS=15 V) / 130 mΩ typ (VGS=18 V) at ID=10 A, TC=25°C.

Key specifications

Parameter Value
Manufacturer Bestirpower
Package TO-247-3L
Category Silicon Carbide (SiC) Devices
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • BCW120N160W1

CAD (KiCad official)

  • Symbol: BCW120N160W1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3L (KiCad packages3D, STEP)
  • 3D model files: bcw120n160w1-etched.step / bcw120n160w1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw120n160w1.step / bcw120n160w1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bestirpower datasheet (8 pp, sha256 f84e39beaeb8e160, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF