component
BCV27T
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BCV27T
CBI · Bipolar (BJT) · SOT-523
BCV27T from CBI, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN Darlington transistor; emitter-base voltage is limited to 10 V (VEBO) and emitter-base breakdown is 10 V min at IE=10µA. |
| 2 | EMITTER | passive | Emitter of the NPN Darlington transistor; collector current is rated to 500 mA maximum. |
| 3 | COLLECTOR | passive | Collector of the NPN Darlington transistor; rated 40 V collector-base (VCBO), 30 V collector-emitter (VCEO), 500 mA continuous and 300 mW dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 30 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 10 | V | 1 | |||
| Collector Current | IC | 500 | mA | 1 | |||
| Collector Power Dissipation | PC | 300 | mW | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 30 | V | IC=10mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 10 | V | IE=10µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | µA | VCB=30V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB=10V, IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 4000 | VCE=1V, IC=1mA | 1 | |||
| DC current gain hFE(2) | hFE(2) | 10000 | VCE=5V, IC=10mA | 1 | |||
| DC current gain hFE(3) | hFE(3) | 20000 | VCE=5V, IC=100mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=100mA, IB=0.1mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.5 | V | IC=100mA, IB=0.1mA | 1 | ||
| Collector output capacitance | Cob | 3.5 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 170 | MHz | VCE=5V,IC=50mA, f=100MHz | 1 | ||
| Thermal Resistance From Junction To Ambient | RΘJA | 416 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
BCV27T - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
bcv27t-etched.step/bcv27t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcv27t.step/bcv27t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
951524dc38cb40cd, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCV27T
**CBI** · Bipolar (BJT) · SOT-523
BCV27T from CBI, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN Darlington transistor; emitter-base voltage is limited to 10 V (VEBO) and emitter-base breakdown is 10 V min at IE=10µA. |
| 2 | EMITTER | passive | Emitter of the NPN Darlington transistor; collector current is rated to 500 mA maximum. |
| 3 | COLLECTOR | passive | Collector of the NPN Darlington transistor; rated 40 V collector-base (VCBO), 30 V collector-emitter (VCEO), 500 mA continuous and 300 mW dissipation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | 40 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | 30 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | 10 | V | | 1 |
| Collector Current | IC | | | 500 | mA | | 1 |
| Collector Power Dissipation | PC | | | 300 | mW | | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 40 | | | V | IC=100µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 30 | | | V | IC=10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 10 | | | V | IE=10µA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | 0.1 | µA | VCB=30V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | 0.1 | µA | VEB=10V, IC=0 | 1 |
| DC current gain hFE(1) | hFE(1) | 4000 | | | | VCE=1V, IC=1mA | 1 |
| DC current gain hFE(2) | hFE(2) | 10000 | | | | VCE=5V, IC=10mA | 1 |
| DC current gain hFE(3) | hFE(3) | 20000 | | | | VCE=5V, IC=100mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 1 | V | IC=100mA, IB=0.1mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.5 | V | IC=100mA, IB=0.1mA | 1 |
| Collector output capacitance | Cob | | | 3.5 | pF | VCB=10V, IE=0, f=1MHz | 1 |
| Transition frequency | fT | | 170 | | MHz | VCE=5V,IC=50mA, f=100MHz | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA | | 416 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `BCV27T`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `bcv27t-etched.step` / `bcv27t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcv27t.step` / `bcv27t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CBI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921052887601152) (3 pp, sha256 `951524dc38cb40cd`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bcv27t-datasheet.pdf)