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BCV27T

Public Made by Adom

by adom

CBI Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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BCV27T

CBI · Bipolar (BJT) · SOT-523

BCV27T from CBI, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN Darlington transistor; emitter-base voltage is limited to 10 V (VEBO) and emitter-base breakdown is 10 V min at IE=10µA.
2 EMITTER passive Emitter of the NPN Darlington transistor; collector current is rated to 500 mA maximum.
3 COLLECTOR passive Collector of the NPN Darlington transistor; rated 40 V collector-base (VCBO), 30 V collector-emitter (VCEO), 500 mA continuous and 300 mW dissipation.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 40 V 1
Collector-Emitter Voltage VCEO 30 V 1
Emitter-Base Voltage VEBO 10 V 1
Collector Current IC 500 mA 1
Collector Power Dissipation PC 300 mW 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO 40 V IC=100µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 30 V IC=10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 10 V IE=10µA, IC=0 1
Collector cut-off current ICBO 0.1 µA VCB=30V, IE=0 1
Emitter cut-off current IEBO 0.1 µA VEB=10V, IC=0 1
DC current gain hFE(1) hFE(1) 4000 VCE=1V, IC=1mA 1
DC current gain hFE(2) hFE(2) 10000 VCE=5V, IC=10mA 1
DC current gain hFE(3) hFE(3) 20000 VCE=5V, IC=100mA 1
Collector-emitter saturation voltage VCE(sat) 1 V IC=100mA, IB=0.1mA 1
Base-emitter saturation voltage VBE(sat) 1.5 V IC=100mA, IB=0.1mA 1
Collector output capacitance Cob 3.5 pF VCB=10V, IE=0, f=1MHz 1
Transition frequency fT 170 MHz VCE=5V,IC=50mA, f=100MHz 1
Thermal Resistance From Junction To Ambient RΘJA 416 ℃/W 1

CAD (KiCad official)

  • Symbol: BCV27T
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: bcv27t-etched.step / bcv27t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcv27t.step / bcv27t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 951524dc38cb40cd, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF