# BCT12N65

**baocheng(Shandong Baocheng Elec)** · MOSFETs · TO-220F

BCT12N65 from baocheng(Shandong Baocheng Elec), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated VGSS ±30 V with threshold VGS(th) 2 to 4 V at ID=0.25 mA. |
| 2 | D | passive | Drain, rated VDSS 650 V and continuous ID 12 A at TC=25°C (pulsed 48 A). |
| 3 | S | passive | Source, with body diode continuous forward current IS 12 A and pulse current 48 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | baocheng(Shandong Baocheng Elec) |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous drain current | ID |  |  | 12 | A | TC=25°C | 1 |
| Continuous drain current | ID |  |  | 7.5 | A | TC=100°C | 1 |
| Pulsed drain current | IDM |  |  | 48 | A | Pulse width limited by maximum junction temperature | 1 |
| Gate-source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Avalanche energy, single pulse | EAS |  |  | 500 | mJ | L=10mH, IAS=10A, Starting Tj=25°C | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD=12A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C | 1 |
| Power dissipation TO-220F/TO-220F Narrow Pin | PD |  |  | 42 | W | TC=25°C | 1 |
| Power dissipation derating TO-220F/TO-220F Narrow Pin | PD |  |  | 0.34 | W/°C | Derate above 25°C | 1 |
| Operating junction and storage temperature range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Continuous diode forward current | IS |  |  | 12 | A |  | 1 |
| Diode pulse current | IS,pulse |  |  | 48 | A |  | 1 |
| Thermal resistance, junction-to-case (TO-220F) | RθJC |  |  | 2.98 | °C/W | TO-220F/TO-220F Narrow Pin | 1 |
| Thermal resistance, junction-to-ambient (TO-220F) | RθJA |  | 110 |  | °C/W | TO-220F/TO-220F Narrow Pin | 2 |
| Drain-source breakdown voltage | BVDSS | 650 |  |  | V | VGS=0 V, ID=0.25 mA | 2 |
| Gate threshold voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=0.25 mA | 2 |
| Drain cut-off current | IDSS |  |  | 1 | µA | VDS=650 V, VGS=0 V, Tj = 25°C | 2 |
| Drain cut-off current | IDSS |  |  | 100 | µA | VDS=650 V, VGS=0 V, Tj = 125°C | 2 |
| Gate leakage current, forward | IGSSF |  |  | 100 | nA | VGS=30 V, VDS=0 V | 2 |
| Gate leakage current, reverse | IGSSR |  |  | -100 | nA | VGS=-30 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.64 | 0.8 | Ω | VGS=10 V, ID=6A | 2 |
| Diode forward voltage | VSD |  |  | 1.5 | V | VGS=0 V, IF=12 A | 2 |

## CAD (KiCad official)

- Symbol: `BCT12N65`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [baocheng(Shandong Baocheng Elec) datasheet](docs/bct12n65-datasheet.pdf) (9 pp, sha256 `c17d96fcd9233395`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bct12n65-datasheet.pdf)