component
BCT12N65
Public Made by Adomby adom
baocheng(Shandong Baocheng Elec) MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCT12N65
baocheng(Shandong Baocheng Elec) · MOSFETs · TO-220F
BCT12N65 from baocheng(Shandong Baocheng Elec), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated VGSS ±30 V with threshold VGS(th) 2 to 4 V at ID=0.25 mA. |
| 2 | D | passive | Drain, rated VDSS 650 V and continuous ID 12 A at TC=25°C (pulsed 48 A). |
| 3 | S | passive | Source, with body diode continuous forward current IS 12 A and pulse current 48 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | baocheng(Shandong Baocheng Elec) |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 650 | V | 1 | |||
| Continuous drain current | ID | 12 | A | TC=25°C | 1 | ||
| Continuous drain current | ID | 7.5 | A | TC=100°C | 1 | ||
| Pulsed drain current | IDM | 48 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Avalanche energy, single pulse | EAS | 500 | mJ | L=10mH, IAS=10A, Starting Tj=25°C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | ISD=12A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C | 1 | ||
| Power dissipation TO-220F/TO-220F Narrow Pin | PD | 42 | W | TC=25°C | 1 | ||
| Power dissipation derating TO-220F/TO-220F Narrow Pin | PD | 0.34 | W/°C | Derate above 25°C | 1 | ||
| Operating junction and storage temperature range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Continuous diode forward current | IS | 12 | A | 1 | |||
| Diode pulse current | IS,pulse | 48 | A | 1 | |||
| Thermal resistance, junction-to-case (TO-220F) | RθJC | 2.98 | °C/W | TO-220F/TO-220F Narrow Pin | 1 | ||
| Thermal resistance, junction-to-ambient (TO-220F) | RθJA | 110 | °C/W | TO-220F/TO-220F Narrow Pin | 2 | ||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=0.25 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=0.25 mA | 2 | |
| Drain cut-off current | IDSS | 1 | µA | VDS=650 V, VGS=0 V, Tj = 25°C | 2 | ||
| Drain cut-off current | IDSS | 100 | µA | VDS=650 V, VGS=0 V, Tj = 125°C | 2 | ||
| Gate leakage current, forward | IGSSF | 100 | nA | VGS=30 V, VDS=0 V | 2 | ||
| Gate leakage current, reverse | IGSSR | -100 | nA | VGS=-30 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.64 | 0.8 | Ω | VGS=10 V, ID=6A | 2 | |
| Diode forward voltage | VSD | 1.5 | V | VGS=0 V, IF=12 A | 2 |
CAD (KiCad official)
- Symbol:
BCT12N65 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: baocheng(Shandong Baocheng Elec) datasheet (9 pp, sha256
c17d96fcd9233395, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).