# BCD50N06

**baocheng Shandong Baocheng Elec** · MOSFETs · TO-252

BCD50N06 from baocheng Shandong Baocheng Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), with VGS(th) of 1.2 V min to 2.5 V max at 250 µA. |
| 2 | D | passive | Drain (also the exposed tab); VDS is 60 V max, with continuous ID of 50 A at TC=25ºC and pulsed ID of 200 A. |
| 3 | S | passive | Source; body diode continuous forward current IS is 50 A max, with VSD of 1.2 V max at 20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | baocheng Shandong Baocheng Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V | VGS = 0V | 2 |
| Continuous Drain Current (TC = 25ºC) | ID |  |  | 50 | A | TC = 25ºC | 2 |
| Continuous Drain Current (TC = 100ºC) | ID |  |  | 32 | A | TC = 100ºC | 2 |
| Pulsed Drain Current | ID,pulse |  |  | 200 | A |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 98 | mJ | L=0.5mH, VDD=30V, Start TJ=25℃ (note 1) | 2 |
| Power Dissipation | PD |  |  | 62.5 | W |  | 2 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 2 |
| Thermal Resistance, Junction-to-Case | RthJC |  |  | 2 | ºC/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  |  | 62 | ºC/W |  | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS = 0V, ID = 250µA | 3 |
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS |  |  | 1 | µA | VDS = 60V, VGS = 0V, TJ = 25ºC | 3 |
| Zero Gate Voltage Drain Current (TJ = 125ºC) | IDSS |  |  | 100 | µA | VDS = 60V, VGS = 0V, TJ = 125ºC | 3 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±20V | 3 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS = VGS, ID = 250µA | 3 |
| Drain-Source On-State Resistance (VGS = 10V) | RDS(on) |  | 13.5 | 17 | mΩ | VGS = 10V, ID = 20A | 3 |
| Drain-Source On-State Resistance (VGS = 4.5V) | RDS(on) |  | 18 | 23 | mΩ | VGS = 4.5V, ID = 20A | 3 |
| Body Diode Forward Voltage | VSD |  |  | 1.2 | V | TJ = 25ºC, ISD = 20A, VGS = 0V | 3 |
| Continuous Diode Forward Current | IS |  |  | 50 | A |  | 3 |

## CAD (KiCad official)

- Symbol: `BCD50N06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `bcd50n06-etched.step` / `bcd50n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcd50n06.step` / `bcd50n06.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [baocheng Shandong Baocheng Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590239755331416064) (11 pp, sha256 `c0061b557ebfd463`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bcd50n06-datasheet.pdf)