component
BCD50N06
Public Made by Adomby adom
baocheng Shandong Baocheng Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
bcd50n06: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+262−1
README.md+26@@ -21,6 +21,32 @@ BCD50N06 from baocheng Shandong Baocheng Elec, in a TO-252. Pinout and pin descr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | VGS = 0V | 2 |+| Continuous Drain Current (TC = 25ºC) | ID | | | 50 | A | TC = 25ºC | 2 |+| Continuous Drain Current (TC = 100ºC) | ID | | | 32 | A | TC = 100ºC | 2 |+| Pulsed Drain Current | ID,pulse | | | 200 | A | | 2 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |+| Single Pulse Avalanche Energy | EAS | | | 98 | mJ | L=0.5mH, VDD=30V, Start TJ=25℃ (note 1) | 2 |+| Power Dissipation | PD | | | 62.5 | W | | 2 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 2 |+| Thermal Resistance, Junction-to-Case | RthJC | | | 2 | ºC/W | | 2 |+| Thermal Resistance, Junction-to-Ambient | RthJA | | | 62 | ºC/W | | 2 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250µA | 3 |+| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS | | | 1 | µA | VDS = 60V, VGS = 0V, TJ = 25ºC | 3 |+| Zero Gate Voltage Drain Current (TJ = 125ºC) | IDSS | | | 100 | µA | VDS = 60V, VGS = 0V, TJ = 125ºC | 3 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20V | 3 |+| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS = VGS, ID = 250µA | 3 |+| Drain-Source On-State Resistance (VGS = 10V) | RDS(on) | | 13.5 | 17 | mΩ | VGS = 10V, ID = 20A | 3 |+| Drain-Source On-State Resistance (VGS = 4.5V) | RDS(on) | | 18 | 23 | mΩ | VGS = 4.5V, ID = 20A | 3 |+| Body Diode Forward Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 20A, VGS = 0V | 3 |+| Continuous Diode Forward Current | IS | | | 50 | A | | 3 |+ ## CAD (KiCad official) - Symbol: `BCD50N06`
page.json+236−1@@ -148,6 +148,241 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c0061b557ebfd463",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TC = 25ºC)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TC = 25ºC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TC = 100ºC)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "TC = 100ºC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 98,+ "conditions": "L=0.5mH, VDD=30V, Start TJ=25℃ (note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "ºC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (TJ = 25ºC)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 60V, VGS = 0V, TJ = 25ºC",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (TJ = 125ºC)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 60V, VGS = 0V, TJ = 125ºC",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.8,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS = 10V)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 13.5,+ "max": 17,+ "conditions": "VGS = 10V, ID = 20A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS = 4.5V)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 23,+ "conditions": "VGS = 4.5V, ID = 20A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "TJ = 25ºC, ISD = 20A, VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +424,4 @@ "visibility": { "public": true }-}+}