# BCD4N65

**baocheng Shandong Baocheng Elec** · MOSFETs · TO-252

BCD4N65 from baocheng Shandong Baocheng Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGSS of ±30 V and threshold VGS(th) of 2 V min to 4 V max at ID=0.25 mA. |
| 2 | D | passive | Drain (center lead, also the mounting tab); rated for VDSS of 650 V and continuous ID of 4 A at TC=25°C (16 A pulsed). |
| 3 | S | passive | Source; continuous body-diode current IS of 4 A and pulsed 16 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | baocheng Shandong Baocheng Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 |  |  | V | VGS=0 V, ID=0.25 mA | 2 |
| Gate threshold voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=0.25 mA | 2 |
| Drain cut-off current | IDSS |  |  | 1 | μA | VDS=650 V, VGS=0 V, Tj=25°C | 2 |
| Drain cut-off current | IDSS |  |  | 100 | μA | VDS=650 V, VGS=0 V, Tj=125°C | 2 |
| Gate leakage current, Forward | IGSSF |  |  | 100 | nA | VGS=30 V, VDS=0 V | 2 |
| Gate leakage current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2.5 | 2.7 | Ω | VGS=10 V, ID=2 A | 2 |
| Diode forward voltage | VSD |  |  | 1.5 | V | VGS=0 V, IF=4 A | 2 |
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous drain current | ID |  |  | 4 | A | TC=25°C | 1 |
| Continuous drain current | ID |  |  | 2.5 | A | TC=100°C | 1 |
| Pulsed drain current | IDM |  |  | 16 | A |  | 1 |
| Gate-Source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Avalanche energy, single pulse | EAS |  |  | 198 | mJ |  | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns |  | 1 |
| Power Dissipation TO-252 | PD |  |  | 77 | W | TC=25°C | 1 |
| Derate above 25°C, TO-252 | PD |  |  | 0.61 | W/°C | Derate above 25°C | 1 |
| Continuous diode forward current | IS |  |  | 4 | A |  | 1 |
| Diode pulse current | IS,pulse |  |  | 16 | A |  | 1 |
| Operating junction and storage temperature range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, Junction-to-case (TO-252) | RθJC |  |  | 1.62 | °C/W | TO-252 | 1 |
| Thermal resistance, Junction-to-ambient (TO-252) | RθJA |  |  | 110 | °C/W | TO-252 | 1 |
| Reverse recovery time | trr |  | 282 |  | ns | VR=400 V, IF=4 A, dIF/dt=100 A/μs | 2 |
| Reverse recovery charge | Qrr |  | 1.4 |  | μC | VR=400 V, IF=4 A, dIF/dt=100 A/μs | 2 |
| Peak reverse recovery current | Irrm |  | 10 |  | A | VR=400 V, IF=4 A, dIF/dt=100 A/μs | 2 |
| Input capacitance | Ciss |  | 600 |  | pF | VDS=25 V, VGS=0 V, f=1 MHz | 2 |
| Output capacitance | Coss |  | 55 |  | pF | VDS=25 V, VGS=0 V, f=1 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 3.2 |  | pF | VDS=25 V, VGS=0 V, f=1 MHz | 2 |
| Turn-on delay time | td(on) |  | 12 |  | ns | VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V | 2 |
| Rise time | tr |  | 31 |  | ns | VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V | 2 |
| Turn-off delay time | td(off) |  | 42 |  | ns | VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V | 2 |
| Fall time | tf |  | 15 |  | ns | VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V | 2 |
| Gate to source charge | Qgs |  | 3.2 |  | nC | VDD=520 V, ID=4 A, VGS=0 to 10 V | 2 |
| Gate to drain charge | Qgd |  | 5.1 |  | nC | VDD=520 V, ID=4 A, VGS=0 to 10 V | 2 |
| Gate charge total | Qg |  | 12 |  | nC | VDD=520 V, ID=4 A, VGS=0 to 10 V | 2 |
| Gate plateau voltage | Vplatea |  | 6 |  | V | VDD=520 V, ID=4 A, VGS=0 to 10 V | 2 |

## CAD (KiCad official)

- Symbol: `BCD4N65`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `bcd4n65-etched.step` / `bcd4n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcd4n65.step` / `bcd4n65.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [baocheng Shandong Baocheng Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590239516255412224) (8 pp, sha256 `39fe00e2a6a0ea73`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bcd4n65-datasheet.pdf)