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BCD4N65

Public Made by Adom

by adom

baocheng Shandong Baocheng Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCD4N65

baocheng Shandong Baocheng Elec · MOSFETs · TO-252

BCD4N65 from baocheng Shandong Baocheng Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum VGSS of ±30 V and threshold VGS(th) of 2 V min to 4 V max at ID=0.25 mA.
2 D passive Drain (center lead, also the mounting tab); rated for VDSS of 650 V and continuous ID of 4 A at TC=25°C (16 A pulsed).
3 S passive Source; continuous body-diode current IS of 4 A and pulsed 16 A.

Key specifications

Parameter Value
Manufacturer baocheng Shandong Baocheng Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=0.25 mA 2
Gate threshold voltage VGS(th) 2 4 V VDS=VGS, ID=0.25 mA 2
Drain cut-off current IDSS 1 μA VDS=650 V, VGS=0 V, Tj=25°C 2
Drain cut-off current IDSS 100 μA VDS=650 V, VGS=0 V, Tj=125°C 2
Gate leakage current, Forward IGSSF 100 nA VGS=30 V, VDS=0 V 2
Gate leakage current, Reverse IGSSR -100 nA VGS=-30 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 2.5 2.7 Ω VGS=10 V, ID=2 A 2
Diode forward voltage VSD 1.5 V VGS=0 V, IF=4 A 2
Drain-Source Voltage VDSS 650 V 1
Continuous drain current ID 4 A TC=25°C 1
Continuous drain current ID 2.5 A TC=100°C 1
Pulsed drain current IDM 16 A 1
Gate-Source voltage VGSS -30 30 V 1
Avalanche energy, single pulse EAS 198 mJ 1
Peak diode recovery dv/dt dv/dt 5 V/ns 1
Power Dissipation TO-252 PD 77 W TC=25°C 1
Derate above 25°C, TO-252 PD 0.61 W/°C Derate above 25°C 1
Continuous diode forward current IS 4 A 1
Diode pulse current IS,pulse 16 A 1
Operating junction and storage temperature range TJ, TSTG -55 150 °C 1
Thermal resistance, Junction-to-case (TO-252) RθJC 1.62 °C/W TO-252 1
Thermal resistance, Junction-to-ambient (TO-252) RθJA 110 °C/W TO-252 1
Reverse recovery time trr 282 ns VR=400 V, IF=4 A, dIF/dt=100 A/μs 2
Reverse recovery charge Qrr 1.4 μC VR=400 V, IF=4 A, dIF/dt=100 A/μs 2
Peak reverse recovery current Irrm 10 A VR=400 V, IF=4 A, dIF/dt=100 A/μs 2
Input capacitance Ciss 600 pF VDS=25 V, VGS=0 V, f=1 MHz 2
Output capacitance Coss 55 pF VDS=25 V, VGS=0 V, f=1 MHz 2
Reverse transfer capacitance Crss 3.2 pF VDS=25 V, VGS=0 V, f=1 MHz 2
Turn-on delay time td(on) 12 ns VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V 2
Rise time tr 31 ns VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V 2
Turn-off delay time td(off) 42 ns VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V 2
Fall time tf 15 ns VDD=325 V, ID=4 A, RG=10 Ω, VGS=15 V 2
Gate to source charge Qgs 3.2 nC VDD=520 V, ID=4 A, VGS=0 to 10 V 2
Gate to drain charge Qgd 5.1 nC VDD=520 V, ID=4 A, VGS=0 to 10 V 2
Gate charge total Qg 12 nC VDD=520 V, ID=4 A, VGS=0 to 10 V 2
Gate plateau voltage Vplatea 6 V VDD=520 V, ID=4 A, VGS=0 to 10 V 2

CAD (KiCad official)

  • Symbol: BCD4N65
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: bcd4n65-etched.step / bcd4n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcd4n65.step / bcd4n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: baocheng Shandong Baocheng Elec datasheet (8 pp, sha256 39fe00e2a6a0ea73, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF