component
BC860B
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Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC860B
Nexperia · Bipolar (BJT) · SOT-23
BC860B from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; the datasheet gives no pin-specific limit, only the device ratings (VEBO -5 V, IBM peak -200 mA). |
| 2 | E | passive | Emitter terminal of the PNP transistor; the datasheet gives no pin-specific limit, only the device ratings (VEBO -5 V, IC -100 mA). |
| 3 | C | passive | Collector terminal of the PNP transistor, rated for IC -100 mA (peak -200 mA) with VCEO -45 V and VCBO -50 V (open base/emitter). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -50 | V | Open emitter | 2 | ||
| Collector-emitter voltage | VCEO | -45 | V | Open base | 2 | ||
| Emitter-base voltage | VEBO | -5 | V | Open collector | 2 | ||
| Collector current | IC | -100 | mA | 2 | |||
| Peak collector current | ICM | -200 | mA | 2 | |||
| Peak base current | IBM | -200 | mA | 2 | |||
| Total power dissipation | Ptot | 250 | mW | Tamb = 25 °C [1]; [1] transistor mounted on FR4 printed-circuit board | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 500 | K/W | [1] transistor mounted on FR4 printed-circuit board | 2 | ||
| Collector-base cut-off current | ICBO | -1 | -15 | nA | VCB = -30 V; IE = 0 A; Tj = 25 °C | 3 | |
| Collector-base cut-off current | ICBO | -4 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 3 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A; Tj = 25 °C | 3 | ||
| DC current gain | hFE | 220 | 475 | VCE = -5 V; IC = -2 mA; Tj = 25 °C; see Figs 2 and 3 | 3 | ||
| Collector-emitter saturation voltage | VCEsat | -75 | -300 | mV | IC = -10 mA; IB = -0.5 mA; Tj = 25 °C | 3 | |
| Collector-emitter saturation voltage | VCEsat | -250 | -650 | mV | IC = -100 mA; IB = -5 mA; Tj = 25 °C | 3 | |
| Base-emitter voltage | VBE | -600 | -650 | -750 | mV | VCE = -5 V; IC = -2 mA; Tj = 25 °C [2] | 3 |
| Base-emitter voltage | VBE | -820 | mV | VCE = -5 V; IC = -10 mA; Tj = 25 °C [2] | 3 | ||
| Transition frequency | fT | 100 | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tj = 25 °C | 3 | ||
| Noise figure | NF | 4 | dB | VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 30 Hz to 15 kHz; Tj = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
BC860B - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc860b-etched.step/bc860b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc860b.step/bc860b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (8 pp, sha256
e47dbadb8f996608, retrieved 2026-10-17, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC860B
**Nexperia** · Bipolar (BJT) · SOT-23
BC860B from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; the datasheet gives no pin-specific limit, only the device ratings (VEBO -5 V, IBM peak -200 mA). |
| 2 | E | passive | Emitter terminal of the PNP transistor; the datasheet gives no pin-specific limit, only the device ratings (VEBO -5 V, IC -100 mA). |
| 3 | C | passive | Collector terminal of the PNP transistor, rated for IC -100 mA (peak -200 mA) with VCEO -45 V and VCBO -50 V (open base/emitter). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | -50 | V | Open emitter | 2 |
| Collector-emitter voltage | VCEO | | | -45 | V | Open base | 2 |
| Emitter-base voltage | VEBO | | | -5 | V | Open collector | 2 |
| Collector current | IC | | | -100 | mA | | 2 |
| Peak collector current | ICM | | | -200 | mA | | 2 |
| Peak base current | IBM | | | -200 | mA | | 2 |
| Total power dissipation | Ptot | | | 250 | mW | Tamb = 25 °C [1]; [1] transistor mounted on FR4 printed-circuit board | 2 |
| Junction temperature | Tj | | | 150 | °C | | 2 |
| Ambient temperature | Tamb | -65 | | 150 | °C | | 2 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 2 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 500 | K/W | [1] transistor mounted on FR4 printed-circuit board | 2 |
| Collector-base cut-off current | ICBO | | -1 | -15 | nA | VCB = -30 V; IE = 0 A; Tj = 25 °C | 3 |
| Collector-base cut-off current | ICBO | | | -4 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 3 |
| Emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -5 V; IC = 0 A; Tj = 25 °C | 3 |
| DC current gain | hFE | 220 | | 475 | | VCE = -5 V; IC = -2 mA; Tj = 25 °C; see Figs 2 and 3 | 3 |
| Collector-emitter saturation voltage | VCEsat | | -75 | -300 | mV | IC = -10 mA; IB = -0.5 mA; Tj = 25 °C | 3 |
| Collector-emitter saturation voltage | VCEsat | | -250 | -650 | mV | IC = -100 mA; IB = -5 mA; Tj = 25 °C | 3 |
| Base-emitter voltage | VBE | -600 | -650 | -750 | mV | VCE = -5 V; IC = -2 mA; Tj = 25 °C [2] | 3 |
| Base-emitter voltage | VBE | | | -820 | mV | VCE = -5 V; IC = -10 mA; Tj = 25 °C [2] | 3 |
| Transition frequency | fT | 100 | | | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tj = 25 °C | 3 |
| Noise figure | NF | | | 4 | dB | VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 30 Hz to 15 kHz; Tj = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `BC860B`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bc860b-etched.step` / `bc860b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc860b.step` / `bc860b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BC860B.pdf) (8 pp, sha256 `e47dbadb8f996608`, retrieved 2026-10-17, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc860b-datasheet.pdf)