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BC860B

Nexperia · Bipolar (BJT) · SOT-23

BC860B from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP transistor; the datasheet gives no pin-specific limit, only the device ratings (VEBO -5 V, IBM peak -200 mA).
2 E passive Emitter terminal of the PNP transistor; the datasheet gives no pin-specific limit, only the device ratings (VEBO -5 V, IC -100 mA).
3 C passive Collector terminal of the PNP transistor, rated for IC -100 mA (peak -200 mA) with VCEO -45 V and VCBO -50 V (open base/emitter).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -50 V Open emitter 2
Collector-emitter voltage VCEO -45 V Open base 2
Emitter-base voltage VEBO -5 V Open collector 2
Collector current IC -100 mA 2
Peak collector current ICM -200 mA 2
Peak base current IBM -200 mA 2
Total power dissipation Ptot 250 mW Tamb = 25 °C [1]; [1] transistor mounted on FR4 printed-circuit board 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W [1] transistor mounted on FR4 printed-circuit board 2
Collector-base cut-off current ICBO -1 -15 nA VCB = -30 V; IE = 0 A; Tj = 25 °C 3
Collector-base cut-off current ICBO -4 µA VCB = -30 V; IE = 0 A; Tj = 150 °C 3
Emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A; Tj = 25 °C 3
DC current gain hFE 220 475 VCE = -5 V; IC = -2 mA; Tj = 25 °C; see Figs 2 and 3 3
Collector-emitter saturation voltage VCEsat -75 -300 mV IC = -10 mA; IB = -0.5 mA; Tj = 25 °C 3
Collector-emitter saturation voltage VCEsat -250 -650 mV IC = -100 mA; IB = -5 mA; Tj = 25 °C 3
Base-emitter voltage VBE -600 -650 -750 mV VCE = -5 V; IC = -2 mA; Tj = 25 °C [2] 3
Base-emitter voltage VBE -820 mV VCE = -5 V; IC = -10 mA; Tj = 25 °C [2] 3
Transition frequency fT 100 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz; Tj = 25 °C 3
Noise figure NF 4 dB VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 30 Hz to 15 kHz; Tj = 25 °C 3

CAD (KiCad official)

  • Symbol: BC860B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc860b-etched.step / bc860b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc860b.step / bc860b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 e47dbadb8f996608, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF