component
BC858BLT3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC858BLT3G
onsemi · Bipolar (BJT) · SOT-23
BC858BLT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives the base drive conditions only for the saturation and on-voltage tests (IB = -0.5 mA and -5.0 mA) and the emitter-base limit VEBO of -5.0 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; emitter-base voltage is rated at -5.0 V maximum (VEBO) and the emitter-base breakdown V(BR)EBO is -30 V minimum for BC858. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; for BC858 the collector-emitter voltage is -30 V (VCEO), collector-base voltage -30 V (VCBO), and continuous collector current -100 mA with -200 mA peak. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BC858 series) | V(BR)CEO | -30 | V | IC = -10 mA | 3 | ||
| Collector-Emitter Breakdown Voltage (BC858 series, VEB = 0) | V(BR)CES | -30 | V | IC = -10 µA, VEB = 0 | 3 | ||
| Collector-Base Breakdown Voltage (BC858 series) | V(BR)CBO | -30 | V | IC = -10 µA | 3 | ||
| Emitter-Base Breakdown Voltage (BC858 series) | V(BR)EBO | -5 | V | IE = -1.0 µA | 3 | ||
| Collector Cutoff Current | ICBO | -15 | nA | VCB = -30 V | 3 | ||
| Collector Cutoff Current | ICBO | -4 | µA | VCB = -30 V, TA = 150°C | 3 | ||
| DC Current Gain (BC858B) | hFE | 220 | 290 | 475 | IC = -2.0 mA, VCE = -5.0 V | 3 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC = -10 mA, IB = -0.5 mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.65 | V | IC = -100 mA, IB = -5.0 mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.7 | V | IC = -10 mA, IB = -0.5 mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC = -100 mA, IB = -5.0 mA | 3 | ||
| Base-Emitter On Voltage | VBE(on) | -0.6 | V | IC = -2.0 mA, VCE = -5.0 V | 3 | ||
| Base-Emitter On Voltage | VBE(on) | -0.75 | V | IC = -2.0 mA, VCE = -5.0 V | 3 | ||
| Base-Emitter On Voltage | VBE(on) | -0.82 | V | IC = -10 mA, VCE = -5.0 V | 3 | ||
| Current-Gain - Bandwidth Product | fT | 100 | MHz | IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz | 3 | ||
| Output Capacitance | Cob | 4.5 | pF | VCB = -10 V, f = 1.0 MHz | 3 | ||
| Noise Figure (BC858 series) | NF | 10 | dB | IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz | 3 | ||
| Collector-Emitter Voltage (BC858) | VCEO | -30 | V | 2 | |||
| Collector-Base Voltage (BC858) | VCBO | -30 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 2 | |||
| Collector Current - Continuous | IC | -100 | mAdc | 2 | |||
| Collector Current - Peak | IC | -200 | mAdc | 2 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Total Device Dissipation (FR-5 board) | PD | 225 | mW | FR-5 board (Note 1), TA = 25°C | 2 | ||
| Total Device Dissipation (Alumina substrate) | PD | 300 | mW | Alumina substrate (Note 2), TA = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient (FR-5 board) | RJA | 556 | °C/W | FR-5 board (Note 1) | 2 | ||
| Thermal Resistance, Junction-to-Ambient (Alumina substrate) | RJA | 417 | °C/W | Alumina substrate (Note 2) | 2 |
CAD (KiCad official)
- Symbol:
BC858BLT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc858blt3g-etched.step/bc858blt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc858blt3g.step/bc858blt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
daeab23fa6c6ac7c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC858BLT3G
**onsemi** · Bipolar (BJT) · SOT-23
BC858BLT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives the base drive conditions only for the saturation and on-voltage tests (IB = -0.5 mA and -5.0 mA) and the emitter-base limit VEBO of -5.0 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; emitter-base voltage is rated at -5.0 V maximum (VEBO) and the emitter-base breakdown V(BR)EBO is -30 V minimum for BC858. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; for BC858 the collector-emitter voltage is -30 V (VCEO), collector-base voltage -30 V (VCBO), and continuous collector current -100 mA with -200 mA peak. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BC858 series) | V(BR)CEO | -30 | | | V | IC = -10 mA | 3 |
| Collector-Emitter Breakdown Voltage (BC858 series, VEB = 0) | V(BR)CES | -30 | | | V | IC = -10 µA, VEB = 0 | 3 |
| Collector-Base Breakdown Voltage (BC858 series) | V(BR)CBO | -30 | | | V | IC = -10 µA | 3 |
| Emitter-Base Breakdown Voltage (BC858 series) | V(BR)EBO | -5 | | | V | IE = -1.0 µA | 3 |
| Collector Cutoff Current | ICBO | | | -15 | nA | VCB = -30 V | 3 |
| Collector Cutoff Current | ICBO | | | -4 | µA | VCB = -30 V, TA = 150°C | 3 |
| DC Current Gain (BC858B) | hFE | 220 | 290 | 475 | | IC = -2.0 mA, VCE = -5.0 V | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.3 | V | IC = -10 mA, IB = -0.5 mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.65 | V | IC = -100 mA, IB = -5.0 mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.7 | V | IC = -10 mA, IB = -0.5 mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.9 | V | IC = -100 mA, IB = -5.0 mA | 3 |
| Base-Emitter On Voltage | VBE(on) | -0.6 | | | V | IC = -2.0 mA, VCE = -5.0 V | 3 |
| Base-Emitter On Voltage | VBE(on) | | | -0.75 | V | IC = -2.0 mA, VCE = -5.0 V | 3 |
| Base-Emitter On Voltage | VBE(on) | | | -0.82 | V | IC = -10 mA, VCE = -5.0 V | 3 |
| Current-Gain - Bandwidth Product | fT | 100 | | | MHz | IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz | 3 |
| Output Capacitance | Cob | | | 4.5 | pF | VCB = -10 V, f = 1.0 MHz | 3 |
| Noise Figure (BC858 series) | NF | | | 10 | dB | IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz | 3 |
| Collector-Emitter Voltage (BC858) | VCEO | | | -30 | V | | 2 |
| Collector-Base Voltage (BC858) | VCBO | | | -30 | V | | 2 |
| Emitter-Base Voltage | VEBO | | | -5 | V | | 2 |
| Collector Current - Continuous | IC | | | -100 | mAdc | | 2 |
| Collector Current - Peak | IC | | | -200 | mAdc | | 2 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 2 |
| Total Device Dissipation (FR-5 board) | PD | | | 225 | mW | FR-5 board (Note 1), TA = 25°C | 2 |
| Total Device Dissipation (Alumina substrate) | PD | | | 300 | mW | Alumina substrate (Note 2), TA = 25°C | 2 |
| Thermal Resistance, Junction-to-Ambient (FR-5 board) | RJA | | | 556 | °C/W | FR-5 board (Note 1) | 2 |
| Thermal Resistance, Junction-to-Ambient (Alumina substrate) | RJA | | | 417 | °C/W | Alumina substrate (Note 2) | 2 |
## CAD (KiCad official)
- Symbol: `BC858BLT3G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bc858blt3g-etched.step` / `bc858blt3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc858blt3g.step` / `bc858blt3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588928610501865472) (9 pp, sha256 `daeab23fa6c6ac7c`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc858blt3g-datasheet.pdf)