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BC858BLT3G

onsemi · Bipolar (BJT) · SOT-23

BC858BLT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives the base drive conditions only for the saturation and on-voltage tests (IB = -0.5 mA and -5.0 mA) and the emitter-base limit VEBO of -5.0 V.
2 EMITTER passive Emitter terminal of the PNP transistor; emitter-base voltage is rated at -5.0 V maximum (VEBO) and the emitter-base breakdown V(BR)EBO is -30 V minimum for BC858.
3 COLLECTOR passive Collector terminal of the PNP transistor; for BC858 the collector-emitter voltage is -30 V (VCEO), collector-base voltage -30 V (VCBO), and continuous collector current -100 mA with -200 mA peak.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (BC858 series) V(BR)CEO -30 V IC = -10 mA 3
Collector-Emitter Breakdown Voltage (BC858 series, VEB = 0) V(BR)CES -30 V IC = -10 µA, VEB = 0 3
Collector-Base Breakdown Voltage (BC858 series) V(BR)CBO -30 V IC = -10 µA 3
Emitter-Base Breakdown Voltage (BC858 series) V(BR)EBO -5 V IE = -1.0 µA 3
Collector Cutoff Current ICBO -15 nA VCB = -30 V 3
Collector Cutoff Current ICBO -4 µA VCB = -30 V, TA = 150°C 3
DC Current Gain (BC858B) hFE 220 290 475 IC = -2.0 mA, VCE = -5.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 3
Base-Emitter On Voltage VBE(on) -0.6 V IC = -2.0 mA, VCE = -5.0 V 3
Base-Emitter On Voltage VBE(on) -0.75 V IC = -2.0 mA, VCE = -5.0 V 3
Base-Emitter On Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 3
Current-Gain - Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 3
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 3
Noise Figure (BC858 series) NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 3
Collector-Emitter Voltage (BC858) VCEO -30 V 2
Collector-Base Voltage (BC858) VCBO -30 V 2
Emitter-Base Voltage VEBO -5 V 2
Collector Current - Continuous IC -100 mAdc 2
Collector Current - Peak IC -200 mAdc 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2
Total Device Dissipation (FR-5 board) PD 225 mW FR-5 board (Note 1), TA = 25°C 2
Total Device Dissipation (Alumina substrate) PD 300 mW Alumina substrate (Note 2), TA = 25°C 2
Thermal Resistance, Junction-to-Ambient (FR-5 board) RJA 556 °C/W FR-5 board (Note 1) 2
Thermal Resistance, Junction-to-Ambient (Alumina substrate) RJA 417 °C/W Alumina substrate (Note 2) 2

CAD (KiCad official)

  • Symbol: BC858BLT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc858blt3g-etched.step / bc858blt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc858blt3g.step / bc858blt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 daeab23fa6c6ac7c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF