# BC857BV

**Changjing** · Bipolar (BJT) · SOT-563

BC857BV from Changjing, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (PNP); VEBO is -5 V maximum. |
| 2 | B1 | passive | Base of transistor 1 (PNP); VBE is -0.6 to -0.75 V at IC=-2 mA. |
| 3 | C2 | passive | Collector of transistor 2 (PNP); VCEO is -45 V, VCBO is -50 V, and continuous IC is -0.1 A maximum. |
| 4 | E2 | passive | Emitter of transistor 2 (PNP); VEBO is -5 V maximum. |
| 5 | B2 | passive | Base of transistor 2 (PNP); VBE is -0.6 to -0.75 V at IC=-2 mA. |
| 6 | C1 | passive | Collector of transistor 1 (PNP); VCEO is -45 V, VCBO is -50 V, and continuous IC is -0.1 A maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -50 |  |  | V | IC=-10μA,IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -45 |  |  | V | IC=-10mA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-1μA,IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -15 | nA | VCB=-30V,IE=0 | 1 |
| DC current gain | hFE | 220 |  | 475 |  | VCE=-5V,IC=-2mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)(1) |  |  | -0.1 | V | IC=-10mA,IB=-0.5mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)(2) |  |  | -0.4 | V | IC=-100mA,IB=-5mA | 1 |
| Base-emitter saturation voltage | VBE(sat)(1) |  |  | -0.7 | V | IC=-10mA,IB=-0.5mA | 1 |
| Base-emitter saturation voltage | VBE(sat)(2) |  |  | -0.9 | V | IC=-100mA,IB=-5mA | 1 |
| Base-emitter voltage | VBE(1) |  | -0.6 | -0.75 | V | VCE=-5V,IC=-2mA | 1 |
| Base-emitter voltage | VBE(2) |  |  | -0.82 | V | VCE=-5V,IC=-10mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=-5V,IC=-10mA,f=100MHz | 1 |
| Collector output capacitance | Cob |  |  | 4.5 | pF | VCB=-10V,IE=0,f=1MHz | 1 |
| Noise figure | NF |  |  | 10 | dB | VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz | 1 |
| Collector-base voltage | VCBO |  |  | -50 | V | Ta=25℃ | 1 |
| Collector-emitter voltage | VCEO |  |  | -45 | V | Ta=25℃ | 1 |
| Emitter-base voltage | VEBO |  |  | -5 | V | Ta=25℃ | 1 |
| Collector current, continuous | IC |  |  | -0.1 | A | Ta=25℃ | 1 |
| Collector power dissipation | PC |  |  | 0.15 | W | Ta=25℃ | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance from junction to ambient | RθJA |  |  | 833 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `BC857BV`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `bc857bv-etched.step` / `bc857bv-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc857bv.step` / `bc857bv.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603047657871335424) (4 pp, sha256 `80bc46dd0c9b62a9`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bc857bv-datasheet.pdf)