component
BC857BV
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBC857BV
Changjing · Bipolar (BJT) · SOT-563
BC857BV from Changjing, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (PNP); VEBO is -5 V maximum. |
| 2 | B1 | passive | Base of transistor 1 (PNP); VBE is -0.6 to -0.75 V at IC=-2 mA. |
| 3 | C2 | passive | Collector of transistor 2 (PNP); VCEO is -45 V, VCBO is -50 V, and continuous IC is -0.1 A maximum. |
| 4 | E2 | passive | Emitter of transistor 2 (PNP); VEBO is -5 V maximum. |
| 5 | B2 | passive | Base of transistor 2 (PNP); VBE is -0.6 to -0.75 V at IC=-2 mA. |
| 6 | C1 | passive | Collector of transistor 1 (PNP); VCEO is -45 V, VCBO is -50 V, and continuous IC is -0.1 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC=-10μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -45 | V | IC=-10mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-1μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -15 | nA | VCB=-30V,IE=0 | 1 | ||
| DC current gain | hFE | 220 | 475 | VCE=-5V,IC=-2mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | -0.1 | V | IC=-10mA,IB=-0.5mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | -0.4 | V | IC=-100mA,IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat)(1) | -0.7 | V | IC=-10mA,IB=-0.5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat)(2) | -0.9 | V | IC=-100mA,IB=-5mA | 1 | ||
| Base-emitter voltage | VBE(1) | -0.6 | -0.75 | V | VCE=-5V,IC=-2mA | 1 | |
| Base-emitter voltage | VBE(2) | -0.82 | V | VCE=-5V,IC=-10mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=-5V,IC=-10mA,f=100MHz | 1 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=-10V,IE=0,f=1MHz | 1 | ||
| Noise figure | NF | 10 | dB | VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz | 1 | ||
| Collector-base voltage | VCBO | -50 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | -45 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25℃ | 1 | ||
| Collector current, continuous | IC | -0.1 | A | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 0.15 | W | Ta=25℃ | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 833 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
BC857BV - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
bc857bv-etched.step/bc857bv-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc857bv.step/bc857bv.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
80bc46dd0c9b62a9, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).