# BC857BHZGT116

**ROHM Semicon** · Bipolar Transistors - BJT · SOT-23

BC857BHZGT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter of the PNP transistor; VEBO is limited to -5 V and emitter-base breakdown BVEBO is -5 V min at IE = -50μA. |
| 2 | Base | passive | Base of the PNP transistor; VCE(sat) is specified at IB = -0.5mA and -5mA. |
| 3 | Collector | passive | Collector of the PNP transistor; VCEO is -45 V and continuous collector current IC is -100 mA maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO |  |  | -50 | V | Ta = 25°C | 2 |
| Collector-emitter voltage | VCEO |  |  | -45 | V | Ta = 25°C | 2 |
| Emitter-base voltage | VEBO |  |  | -5 | V | Ta = 25°C | 2 |
| Collector current | IC |  |  | -100 | mA | Ta = 25°C | 2 |
| Power dissipation | PD |  |  | 200 | mW | Ta = 25°C; footnote *1: each terminal mounted on a reference land | 2 |
| Power dissipation | PD |  |  | 350 | mW | Ta = 25°C; footnote *2: mounted on ceramic board (7.0×5.0×0.6mm) | 2 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 2 |
| Range of storage temperature | Tstg | -65 |  | 150 | ℃ |  | 2 |
| Collector-base breakdown voltage | BVCBO | -50 |  |  | V | IC = -50μA | 2 |
| Collector-emitter breakdown voltage | BVCEO | -45 |  |  | V | IC = -1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | -5 |  |  | V | IE = -50μA | 2 |
| Collector cut-off current | ICBO |  |  | -15 | nA | VCB = -30V | 2 |
| Collector cut-off current | ICBO |  |  | -4 | μA | VCB = -30V, Ta = 150℃ | 2 |
| Collector-emitter saturation voltage | VCE(sat)1 |  |  | -300 | mV | IC = -10mA, IB = -0.5mA | 2 |
| Collector-emitter saturation voltage | VCE(sat)2 |  |  | -650 | mV | IC = -100mA, IB = -5mA | 2 |
| Base-emitter turn on voltage | VBE(on) | -600 |  | -750 | mV | VCE = -5V, IC = -10mA | 2 |
| DC current gain | hFE | 210 |  | 480 | - | VCE = -5V, IC = -2mA | 2 |
| Transition frequency | fT |  | 250 |  | MHz | VCE = -5V, IE = 20mA, f = 100MHz | 2 |
| Output capacitance | Cob |  | 4.5 |  | pF | VCB = -10V, IE = 0A, f = 1MHz | 2 |

## CAD (KiCad official)

- Symbol: `BC857BHZGT116`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bc857bhzgt116-etched.step` / `bc857bhzgt116-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc857bhzgt116.step` / `bc857bhzgt116.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/bc857bhzgt116-datasheet.pdf) (8 pp, sha256 `6f7eba1f23c50a15`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bc857bhzgt116-datasheet.pdf)