component
BC857BHZGT116
Public Made by Adomby adom
ROHM Semicon Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBC857BHZGT116
ROHM Semicon · Bipolar Transistors - BJT · SOT-23
BC857BHZGT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter of the PNP transistor; VEBO is limited to -5 V and emitter-base breakdown BVEBO is -5 V min at IE = -50μA. |
| 2 | Base | passive | Base of the PNP transistor; VCE(sat) is specified at IB = -0.5mA and -5mA. |
| 3 | Collector | passive | Collector of the PNP transistor; VCEO is -45 V and continuous collector current IC is -100 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -50 | V | Ta = 25°C | 2 | ||
| Collector-emitter voltage | VCEO | -45 | V | Ta = 25°C | 2 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta = 25°C | 2 | ||
| Collector current | IC | -100 | mA | Ta = 25°C | 2 | ||
| Power dissipation | PD | 200 | mW | Ta = 25°C; footnote *1: each terminal mounted on a reference land | 2 | ||
| Power dissipation | PD | 350 | mW | Ta = 25°C; footnote *2: mounted on ceramic board (7.0×5.0×0.6mm) | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -65 | 150 | ℃ | 2 | ||
| Collector-base breakdown voltage | BVCBO | -50 | V | IC = -50μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -45 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -5 | V | IE = -50μA | 2 | ||
| Collector cut-off current | ICBO | -15 | nA | VCB = -30V | 2 | ||
| Collector cut-off current | ICBO | -4 | μA | VCB = -30V, Ta = 150℃ | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | -300 | mV | IC = -10mA, IB = -0.5mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | -650 | mV | IC = -100mA, IB = -5mA | 2 | ||
| Base-emitter turn on voltage | VBE(on) | -600 | -750 | mV | VCE = -5V, IC = -10mA | 2 | |
| DC current gain | hFE | 210 | 480 | - | VCE = -5V, IC = -2mA | 2 | |
| Transition frequency | fT | 250 | MHz | VCE = -5V, IE = 20mA, f = 100MHz | 2 | ||
| Output capacitance | Cob | 4.5 | pF | VCB = -10V, IE = 0A, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
BC857BHZGT116 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc857bhzgt116-etched.step/bc857bhzgt116-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc857bhzgt116.step/bc857bhzgt116.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (8 pp, sha256
6f7eba1f23c50a15, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).