main
History Download
Ray bc856bs: specified limits as data (metadata.characteristics, 24 rows from the datasheet) d244afe 17d ago

BC856BS

Nexperia · Bipolar (BJT) · SOT-363

BC856BS from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of TR1 (first PNP transistor in the pair); per-transistor limits are VEBO -6 V and IC -100 mA (DC), peak ICM -200 mA.
2 B1 passive Base of TR1; per-transistor limits are peak base current IBM -200 mA (single pulse, tp ≤ 1 ms) and VEBO -6 V.
3 C2 passive Collector of TR2 (second PNP transistor in the pair); per-transistor limits are VCBO -80 V and VCEO -65 V.
4 E2 passive Emitter of TR2; per-transistor limits are VEBO -6 V and IC -100 mA (DC), peak ICM -200 mA.
5 B2 passive Base of TR2; per-transistor limits are peak base current IBM -200 mA (single pulse, tp ≤ 1 ms) and VEBO -6 V.
6 C1 passive Collector of TR1; per-transistor limits are VCBO -80 V and VCEO -65 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -80 V open emitter; per transistor 3
Collector-emitter voltage VCEO -65 V open base; per transistor 3
Emitter-base voltage VEBO -6 V open collector; per transistor 3
Collector current IC -100 mA per transistor 3
Peak collector current ICM -200 mA per transistor 3
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms 3
Total power dissipation (per transistor) Ptot 200 mW Tamb ≤ 25 °C [1] 3
Total power dissipation (per device) Ptot 300 mW Tamb ≤ 25 °C [1] 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient (per transistor) Rth(j-a) 625 K/W in free air [1] 4
Thermal resistance junction to solder point (per transistor) Rth(j-sp) 230 K/W 4
Thermal resistance junction to ambient (per device) Rth(j-a) 416 K/W in free air [1] 4
Collector-base cut-off current ICBO -15 nA VCB = -50 V; IE = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO -5 µA VCB = -30 V; IE = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO -100 nA VEB = -6 V; IC = 0 A; Tamb = 25 °C 5
DC current gain hFE 200 290 450 VCE = -5 V; IC = -2 mA 5
Collector-emitter saturation voltage VCEsat -55 -100 mV IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C 5
Collector-emitter saturation voltage VCEsat -200 -300 mV IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 5
Base-emitter saturation voltage VBEsat -755 -850 mV IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C 5
Base-emitter voltage VBE -600 -650 -750 mV VCE = -5 V; IC = -2 mA; Tamb = 25 °C 5
Base-emitter voltage VBE -820 mV VCE = -5 V; IC = -10 mA; Tamb = 25 °C 5
Transition frequency fT 100 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: BC856BS
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc856bs-etched.step / bc856bs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856bs.step / bc856bs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 29ece727073dabf6, retrieved 2026-10-09, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF