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BC856BS
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Nexperia Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bc856bs: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
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17d ago
BC856BS
Nexperia · Bipolar (BJT) · SOT-363
BC856BS from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of TR1 (first PNP transistor in the pair); per-transistor limits are VEBO -6 V and IC -100 mA (DC), peak ICM -200 mA. |
| 2 | B1 | passive | Base of TR1; per-transistor limits are peak base current IBM -200 mA (single pulse, tp ≤ 1 ms) and VEBO -6 V. |
| 3 | C2 | passive | Collector of TR2 (second PNP transistor in the pair); per-transistor limits are VCBO -80 V and VCEO -65 V. |
| 4 | E2 | passive | Emitter of TR2; per-transistor limits are VEBO -6 V and IC -100 mA (DC), peak ICM -200 mA. |
| 5 | B2 | passive | Base of TR2; per-transistor limits are peak base current IBM -200 mA (single pulse, tp ≤ 1 ms) and VEBO -6 V. |
| 6 | C1 | passive | Collector of TR1; per-transistor limits are VCBO -80 V and VCEO -65 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -80 | V | open emitter; per transistor | 3 | ||
| Collector-emitter voltage | VCEO | -65 | V | open base; per transistor | 3 | ||
| Emitter-base voltage | VEBO | -6 | V | open collector; per transistor | 3 | ||
| Collector current | IC | -100 | mA | per transistor | 3 | ||
| Peak collector current | ICM | -200 | mA | per transistor | 3 | ||
| Peak base current | IBM | -200 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation (per transistor) | Ptot | 200 | mW | Tamb ≤ 25 °C [1] | 3 | ||
| Total power dissipation (per device) | Ptot | 300 | mW | Tamb ≤ 25 °C [1] | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance junction to ambient (per transistor) | Rth(j-a) | 625 | K/W | in free air [1] | 4 | ||
| Thermal resistance junction to solder point (per transistor) | Rth(j-sp) | 230 | K/W | 4 | |||
| Thermal resistance junction to ambient (per device) | Rth(j-a) | 416 | K/W | in free air [1] | 4 | ||
| Collector-base cut-off current | ICBO | -15 | nA | VCB = -50 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| Collector-base cut-off current | ICBO | -5 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 5 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB = -6 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| DC current gain | hFE | 200 | 290 | 450 | VCE = -5 V; IC = -2 mA | 5 | |
| Collector-emitter saturation voltage | VCEsat | -55 | -100 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 5 | |
| Collector-emitter saturation voltage | VCEsat | -200 | -300 | mV | IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 | |
| Base-emitter saturation voltage | VBEsat | -755 | -850 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 5 | |
| Base-emitter voltage | VBE | -600 | -650 | -750 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 5 |
| Base-emitter voltage | VBE | -820 | mV | VCE = -5 V; IC = -10 mA; Tamb = 25 °C | 5 | ||
| Transition frequency | fT | 100 | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 5 |
CAD (KiCad official)
- Symbol:
BC856BS - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bc856bs-etched.step/bc856bs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc856bs.step/bc856bs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (11 pp, sha256
29ece727073dabf6, retrieved 2026-10-09, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC856BS
**Nexperia** · Bipolar (BJT) · SOT-363
BC856BS from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of TR1 (first PNP transistor in the pair); per-transistor limits are VEBO -6 V and IC -100 mA (DC), peak ICM -200 mA. |
| 2 | B1 | passive | Base of TR1; per-transistor limits are peak base current IBM -200 mA (single pulse, tp ≤ 1 ms) and VEBO -6 V. |
| 3 | C2 | passive | Collector of TR2 (second PNP transistor in the pair); per-transistor limits are VCBO -80 V and VCEO -65 V. |
| 4 | E2 | passive | Emitter of TR2; per-transistor limits are VEBO -6 V and IC -100 mA (DC), peak ICM -200 mA. |
| 5 | B2 | passive | Base of TR2; per-transistor limits are peak base current IBM -200 mA (single pulse, tp ≤ 1 ms) and VEBO -6 V. |
| 6 | C1 | passive | Collector of TR1; per-transistor limits are VCBO -80 V and VCEO -65 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | -80 | V | open emitter; per transistor | 3 |
| Collector-emitter voltage | VCEO | | | -65 | V | open base; per transistor | 3 |
| Emitter-base voltage | VEBO | | | -6 | V | open collector; per transistor | 3 |
| Collector current | IC | | | -100 | mA | per transistor | 3 |
| Peak collector current | ICM | | | -200 | mA | per transistor | 3 |
| Peak base current | IBM | | | -200 | mA | single pulse; tp ≤ 1 ms | 3 |
| Total power dissipation (per transistor) | Ptot | | | 200 | mW | Tamb ≤ 25 °C [1] | 3 |
| Total power dissipation (per device) | Ptot | | | 300 | mW | Tamb ≤ 25 °C [1] | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Thermal resistance junction to ambient (per transistor) | Rth(j-a) | | | 625 | K/W | in free air [1] | 4 |
| Thermal resistance junction to solder point (per transistor) | Rth(j-sp) | | | 230 | K/W | | 4 |
| Thermal resistance junction to ambient (per device) | Rth(j-a) | | | 416 | K/W | in free air [1] | 4 |
| Collector-base cut-off current | ICBO | | | -15 | nA | VCB = -50 V; IE = 0 A; Tamb = 25 °C | 5 |
| Collector-base cut-off current | ICBO | | | -5 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 5 |
| Emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -6 V; IC = 0 A; Tamb = 25 °C | 5 |
| DC current gain | hFE | 200 | 290 | 450 | | VCE = -5 V; IC = -2 mA | 5 |
| Collector-emitter saturation voltage | VCEsat | | -55 | -100 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 5 |
| Collector-emitter saturation voltage | VCEsat | | -200 | -300 | mV | IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 |
| Base-emitter saturation voltage | VBEsat | | -755 | -850 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 5 |
| Base-emitter voltage | VBE | -600 | -650 | -750 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 5 |
| Base-emitter voltage | VBE | | | -820 | mV | VCE = -5 V; IC = -10 mA; Tamb = 25 °C | 5 |
| Transition frequency | fT | 100 | | | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 5 |
## CAD (KiCad official)
- Symbol: `BC856BS`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bc856bs-etched.step` / `bc856bs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc856bs.step` / `bc856bs.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BC856BS.pdf) (11 pp, sha256 `29ece727073dabf6`, retrieved 2026-10-09, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc856bs-datasheet.pdf)