component
BC856BS
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bc856bs: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
2 files changed
+327−1
README.md+31@@ -24,6 +24,37 @@ BC856BS from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-base voltage | VCBO | | | -80 | V | open emitter; per transistor | 3 |+| Collector-emitter voltage | VCEO | | | -65 | V | open base; per transistor | 3 |+| Emitter-base voltage | VEBO | | | -6 | V | open collector; per transistor | 3 |+| Collector current | IC | | | -100 | mA | per transistor | 3 |+| Peak collector current | ICM | | | -200 | mA | per transistor | 3 |+| Peak base current | IBM | | | -200 | mA | single pulse; tp ≤ 1 ms | 3 |+| Total power dissipation (per transistor) | Ptot | | | 200 | mW | Tamb ≤ 25 °C [1] | 3 |+| Total power dissipation (per device) | Ptot | | | 300 | mW | Tamb ≤ 25 °C [1] | 3 |+| Junction temperature | Tj | | | 150 | °C | | 3 |+| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |+| Thermal resistance junction to ambient (per transistor) | Rth(j-a) | | | 625 | K/W | in free air [1] | 4 |+| Thermal resistance junction to solder point (per transistor) | Rth(j-sp) | | | 230 | K/W | | 4 |+| Thermal resistance junction to ambient (per device) | Rth(j-a) | | | 416 | K/W | in free air [1] | 4 |+| Collector-base cut-off current | ICBO | | | -15 | nA | VCB = -50 V; IE = 0 A; Tamb = 25 °C | 5 |+| Collector-base cut-off current | ICBO | | | -5 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 5 |+| Emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -6 V; IC = 0 A; Tamb = 25 °C | 5 |+| DC current gain | hFE | 200 | 290 | 450 | | VCE = -5 V; IC = -2 mA | 5 |+| Collector-emitter saturation voltage | VCEsat | | -55 | -100 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 5 |+| Collector-emitter saturation voltage | VCEsat | | -200 | -300 | mV | IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 |+| Base-emitter saturation voltage | VBEsat | | -755 | -850 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 5 |+| Base-emitter voltage | VBE | -600 | -650 | -750 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 5 |+| Base-emitter voltage | VBE | | | -820 | mV | VCE = -5 V; IC = -10 mA; Tamb = 25 °C | 5 |+| Transition frequency | fT | 100 | | | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 5 |+ ## CAD (KiCad official) - Symbol: `BC856BS`
page.json+296−1@@ -165,6 +165,301 @@ "Package": "SOT-363", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "29ece727073dabf6",+ "rows": [+ {+ "name": "Collector-base voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -80,+ "conditions": "open emitter; per transistor",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -65,+ "conditions": "open base; per transistor",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -6,+ "conditions": "open collector; per transistor",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "per transistor",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak collector current",+ "symbol": "ICM",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": -200,+ "conditions": "per transistor",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak base current",+ "symbol": "IBM",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": -200,+ "conditions": "single pulse; tp ≤ 1 ms",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation (per transistor)",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Tamb ≤ 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation (per device)",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Tamb ≤ 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient (per transistor)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 625,+ "conditions": "in free air [1]",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to solder point (per transistor)",+ "symbol": "Rth(j-sp)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 230,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient (per device)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 416,+ "conditions": "in free air [1]",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Collector-base cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -15,+ "conditions": "VCB = -50 V; IE = 0 A; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Collector-base cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VCB = -30 V; IE = 0 A; Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VEB = -6 V; IC = 0 A; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 200,+ "typ": 290,+ "max": 450,+ "conditions": "VCE = -5 V; IC = -2 mA",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": -55,+ "max": -100,+ "conditions": "IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": -200,+ "max": -300,+ "conditions": "IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Base-emitter saturation voltage",+ "symbol": "VBEsat",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": -755,+ "max": -850,+ "conditions": "IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Base-emitter voltage",+ "symbol": "VBE",+ "kind": "electrical",+ "unit": "mV",+ "min": -600,+ "typ": -650,+ "max": -750,+ "conditions": "VCE = -5 V; IC = -2 mA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Base-emitter voltage",+ "symbol": "VBE",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": -820,+ "conditions": "VCE = -5 V; IC = -10 mA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Transition frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -206,4 +501,4 @@ "visibility": { "public": true }-}+}