component

BC856BLT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbc856blt1gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
bc856blt1g / README.md
History Download
Ray bc856blt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet) db109bb

BC856BLT1G

onsemi · Bipolar (BJT) · SOT-23

BC856BLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base input control terminal; maximum base-emitter voltage VEBO = −5.0 V.
2 EMITTER passive Emitter terminal serving as a primary current path in the PNP transistor.
3 COLLECTOR passive Collector terminal; maximum collector-emitter voltage VCEO = −65 V, maximum continuous collector current IC = −100 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -65 V IC = −10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -80 V IC = −10 A, VEB = 0 (BC856, SBC856 series) 2
Collector-Base Breakdown Voltage V(BR)CBO -80 V IC = −10 A (BC856, SBC856 series) 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = −1.0 A (BC856, SBC856 series) 2
Collector Cutoff Current ICBO -15 nA VCB = −30 V 2
Collector Cutoff Current ICBO -4 A VCB = −30 V, TA = 150°C 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = −10 mA, IB = −0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = −100 mA, IB = −5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = −10 mA, IB = −0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = −100 mA, IB = −5.0 mA 2
Base-Emitter On Voltage VBE(on) -0.6 -0.75 V IC = −2.0 mA, VCE = −5.0 V 2
Base-Emitter On Voltage VBE(on) -0.82 V IC = −10 mA, VCE = −5.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = −10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz (BC856, SBC856, BC857, SBC857, BC858, NSVBC858 series) 2
Collector-Emitter Breakdown Voltage (maximum rating) VCEO -65 V BC856, SBC856 1
Collector-Base Voltage (maximum rating) VCBO -80 V BC856, SBC856 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mAdc 1
Collector Current - Peak IC -200 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 board (Note 1), TA = 25°C 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W FR-5 board 1
Thermal Resistance, Junction-to-Ambient RθJA 417 °C/W Alumina substrate 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BC856BLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc856blt1g-etched.step / bc856blt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856blt1g.step / bc856blt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 5b3358db41b73faa, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF