component
BC856BLT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bc856blt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+339
README.md+32@@ -21,6 +21,38 @@ BC856BLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Breakdown Voltage | V(BR)CEO | -65 | | | V | IC = −10 mA | 2 |+| Collector-Emitter Breakdown Voltage | V(BR)CES | -80 | | | V | IC = −10 A, VEB = 0 (BC856, SBC856 series) | 2 |+| Collector-Base Breakdown Voltage | V(BR)CBO | -80 | | | V | IC = −10 A (BC856, SBC856 series) | 2 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | V | IE = −1.0 A (BC856, SBC856 series) | 2 |+| Collector Cutoff Current | ICBO | | | -15 | nA | VCB = −30 V | 2 |+| Collector Cutoff Current | ICBO | | | -4 | A | VCB = −30 V, TA = 150°C | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.3 | V | IC = −10 mA, IB = −0.5 mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.65 | V | IC = −100 mA, IB = −5.0 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.7 | V | IC = −10 mA, IB = −0.5 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.9 | V | IC = −100 mA, IB = −5.0 mA | 2 |+| Base-Emitter On Voltage | VBE(on) | -0.6 | | -0.75 | V | IC = −2.0 mA, VCE = −5.0 V | 2 |+| Base-Emitter On Voltage | VBE(on) | | | -0.82 | V | IC = −10 mA, VCE = −5.0 V | 2 |+| Current-Gain - Bandwidth Product | fT | 100 | | | MHz | IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz | 2 |+| Output Capacitance | Cob | | | 4.5 | pF | VCB = −10 V, f = 1.0 MHz | 2 |+| Noise Figure | NF | | | 10 | dB | IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz (BC856, SBC856, BC857, SBC857, BC858, NSVBC858 series) | 2 |+| Collector-Emitter Breakdown Voltage (maximum rating) | VCEO | | | -65 | V | BC856, SBC856 | 1 |+| Collector-Base Voltage (maximum rating) | VCBO | | | -80 | V | BC856, SBC856 | 1 |+| Emitter-Base Voltage | VEBO | | | -5 | V | | 1 |+| Collector Current - Continuous | IC | | | -100 | mAdc | | 1 |+| Collector Current - Peak | IC | | | -200 | mAdc | | 1 |+| Total Device Dissipation FR-5 Board | PD | | | 225 | mW | FR-5 board (Note 1), TA = 25°C | 1 |+| Total Device Dissipation Alumina Substrate | PD | | | 300 | mW | Alumina substrate (Note 2), TA = 25°C | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 556 | °C/W | FR-5 board | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 417 | °C/W | Alumina substrate | 1 |+| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |+ ## CAD (KiCad official) - Symbol: `BC856BLT1G`
page.json+307@@ -133,6 +133,313 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5b3358db41b73faa",+ "rows": [+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": -65,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": -80,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 A, VEB = 0 (BC856, SBC856 series)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": -80,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 A (BC856, SBC856 series)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "IE = −1.0 A (BC856, SBC856 series)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -15,+ "conditions": "VCB = −30 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -4,+ "conditions": "VCB = −30 V, TA = 150°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.3,+ "conditions": "IC = −10 mA, IB = −0.5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.65,+ "conditions": "IC = −100 mA, IB = −5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.7,+ "conditions": "IC = −10 mA, IB = −0.5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.9,+ "conditions": "IC = −100 mA, IB = −5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.6,+ "typ": null,+ "max": -0.75,+ "conditions": "IC = −2.0 mA, VCE = −5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.82,+ "conditions": "IC = −10 mA, VCE = −5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain - Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cob",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "VCB = −10 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz (BC856, SBC856, BC857, SBC857, BC858, NSVBC858 series)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage (maximum rating)",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -65,+ "conditions": "BC856, SBC856",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage (maximum rating)",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -80,+ "conditions": "BC856, SBC856",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Peak",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": -200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation FR-5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 board (Note 1), TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina substrate (Note 2), TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina substrate",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],