# BC850BWE6327-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-323

BC850BWE6327-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; the datasheet labels it B on the package drawing and symbol, and the maximum emitter-base voltage is 6 V. |
| 2 | E | passive | Emitter; the datasheet labels it E on the package drawing and symbol, and the maximum continuous collector current is 0.1 A. |
| 3 | C | passive | Collector, the single lead on one side of the package; the datasheet rates VCBO at 50 V and VCEO at 45 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (absolute maximum) | VCBO |  |  | 50 | V |  | 1 |
| Collector-emitter voltage (absolute maximum) | VCEO |  |  | 45 | V |  | 1 |
| Emitter-base voltage (absolute maximum) | VEBO |  |  | 6 | V |  | 1 |
| Collector current, continuous (absolute maximum) | IC |  |  | 0.1 | A |  | 1 |
| Collector power dissipation (absolute maximum) | PC |  |  | 150 | mW |  | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction to ambient | RθJA |  |  | 833 | °C/W |  | 1 |
| Collector-base breakdown voltage | VCBO | 50 |  |  | V | IC= 10µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | VCEO | 45 |  |  | V | IC= 10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | VEBO | 6 |  |  | V | IE= 1 µA, IC=0 | 1 |
| Collector cutoff current | ICBO |  |  | 15 | nA | VCB=30V | 1 |
| DC current gain | hFE | 150 |  |  |  | VCE= 5V, IC= 10µA | 1 |
| DC current gain | hFE | 200 |  | 450 |  | VCE= 5V, IC= 2mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.25 | V | IC=10mA, IB=0.5mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.6 | V | IC=100mA, IB=5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 0.7 | V | IC=10mA, IB=0.5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 0.9 | V | IC=100mA, IB=5mA | 1 |
| Base-emitter voltage | VBE(on) | 580 | 660 | 700 | mV | VCE= 5V, IC= 2mA | 1 |
| Base-emitter voltage | VBE(on) |  |  | 770 | mV | VCE= 5V, IC= 10mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE= 5 V, IC= 10mA, f=100MHz | 1 |
| Collector output capacitance | Cob |  |  | 4.5 | pF | VCB=10V, f=1MHz | 1 |
| Noise figure | NF |  |  | 10 | dB | VCE=5V, Ic=0.2mA, f=1KHz, RS=2KΩ, BW=200Hz | 1 |

## CAD (KiCad official)

- Symbol: `BC850BWE6327-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `bc850bwe6327-hxy-etched.step` / `bc850bwe6327-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc850bwe6327-hxy.step` / `bc850bwe6327-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604449391932043264) (4 pp, sha256 `1bdc6b02a8f7b91f`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bc850bwe6327-hxy-datasheet.pdf)