component
BC850BWE6327-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBC850BWE6327-HXY
HXY MOSFET · Bipolar (BJT) · SOT-323
BC850BWE6327-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; the datasheet labels it B on the package drawing and symbol, and the maximum emitter-base voltage is 6 V. |
| 2 | E | passive | Emitter; the datasheet labels it E on the package drawing and symbol, and the maximum continuous collector current is 0.1 A. |
| 3 | C | passive | Collector, the single lead on one side of the package; the datasheet rates VCBO at 50 V and VCEO at 45 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (absolute maximum) | VCBO | 50 | V | 1 | |||
| Collector-emitter voltage (absolute maximum) | VCEO | 45 | V | 1 | |||
| Emitter-base voltage (absolute maximum) | VEBO | 6 | V | 1 | |||
| Collector current, continuous (absolute maximum) | IC | 0.1 | A | 1 | |||
| Collector power dissipation (absolute maximum) | PC | 150 | mW | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 833 | °C/W | 1 | |||
| Collector-base breakdown voltage | VCBO | 50 | V | IC= 10µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | 45 | V | IC= 10mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | 6 | V | IE= 1 µA, IC=0 | 1 | ||
| Collector cutoff current | ICBO | 15 | nA | VCB=30V | 1 | ||
| DC current gain | hFE | 150 | VCE= 5V, IC= 10µA | 1 | |||
| DC current gain | hFE | 200 | 450 | VCE= 5V, IC= 2mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC=10mA, IB=0.5mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC=100mA, IB=5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.7 | V | IC=10mA, IB=0.5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.9 | V | IC=100mA, IB=5mA | 1 | ||
| Base-emitter voltage | VBE(on) | 580 | 660 | 700 | mV | VCE= 5V, IC= 2mA | 1 |
| Base-emitter voltage | VBE(on) | 770 | mV | VCE= 5V, IC= 10mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE= 5 V, IC= 10mA, f=100MHz | 1 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=10V, f=1MHz | 1 | ||
| Noise figure | NF | 10 | dB | VCE=5V, Ic=0.2mA, f=1KHz, RS=2KΩ, BW=200Hz | 1 |
CAD (KiCad official)
- Symbol:
BC850BWE6327-HXY - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bc850bwe6327-hxy-etched.step/bc850bwe6327-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc850bwe6327-hxy.step/bc850bwe6327-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
1bdc6b02a8f7b91f, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).