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Ray bc850b: specified limits as data (metadata.characteristics, 21 rows from the datasheet) 12ea8c9 23d ago

BC850B

Nexperia · Bipolar (BJT) · SOT-23

BC850B from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base control input terminal with maximum peak base current of 200 mA.
2 E passive Emitter terminal providing the common current path for the NPN transistor.
3 C output Collector terminal rated for maximum collector current of 100 mA and maximum collector-emitter voltage of 45 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 50 V open emitter 2
collector-emitter voltage VCEO 45 V open base 2
emitter-base voltage VEBO 5 V open collector 2
collector current IC 100 mA 2
peak collector current ICM 200 mA 2
peak base current IBM 200 mA 2
total power dissipation Ptot 250 mW Tamb ≤ 25 °C [1] 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 500 K/W [1] device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint 2
collector-base cut-off current ICBO 15 nA VCB = 30 V; IE = 0 A; Tj = 25 °C 3
collector-base cut-off current ICBO 5 µA VCB = 30 V; IE = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tj = 25 °C 3
DC current gain hFE 200 290 450 - VCE = 5 V; IC = 2 mA; Tj = 25 °C 3
collector-emitter saturation voltage VCEsat 90 250 mV IC = 10 mA; IB = 0.5 mA; Tj = 25 °C 3
collector-emitter saturation voltage VCEsat 200 600 mV IC = 100 mA; IB = 5 mA; Tj = 25 °C 3
base-emitter voltage VBE 580 660 700 mV VCE = 5 V; IC = 2 mA; Tj = 25 °C [2] 3
base-emitter voltage VBE 770 mV VCE = 5 V; IC = 10 mA; Tj = 25 °C [2] 3
transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz; Tj = 25 °C 3
noise figure NF 4 dB VCE = 5 V; IC = 200 µA; RS = 2 kΩ; B = 200 Hz; f = 10 Hz to 15.7 kHz; Tj = 25 °C 3

CAD (KiCad official)

  • Symbol: BC850B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc850b-etched.step / bc850b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc850b.step / bc850b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 b98ca97d7116de48, retrieved 2026-09-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF