component
BC850B
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bc850b: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+287
README.md+28@@ -21,6 +21,34 @@ BC850B from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from th | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| collector-base voltage | VCBO | | | 50 | V | open emitter | 2 |+| collector-emitter voltage | VCEO | | | 45 | V | open base | 2 |+| emitter-base voltage | VEBO | | | 5 | V | open collector | 2 |+| collector current | IC | | | 100 | mA | | 2 |+| peak collector current | ICM | | | 200 | mA | | 2 |+| peak base current | IBM | | | 200 | mA | | 2 |+| total power dissipation | Ptot | | | 250 | mW | Tamb ≤ 25 °C [1] | 2 |+| junction temperature | Tj | | | 150 | °C | | 2 |+| ambient temperature | Tamb | -65 | | 150 | °C | | 2 |+| storage temperature | Tstg | -65 | | 150 | °C | | 2 |+| thermal resistance from junction to ambient | Rth(j-a) | | | 500 | K/W | [1] device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint | 2 |+| collector-base cut-off current | ICBO | | | 15 | nA | VCB = 30 V; IE = 0 A; Tj = 25 °C | 3 |+| collector-base cut-off current | ICBO | | | 5 | µA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 3 |+| emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A; Tj = 25 °C | 3 |+| DC current gain | hFE | 200 | 290 | 450 | - | VCE = 5 V; IC = 2 mA; Tj = 25 °C | 3 |+| collector-emitter saturation voltage | VCEsat | | 90 | 250 | mV | IC = 10 mA; IB = 0.5 mA; Tj = 25 °C | 3 |+| collector-emitter saturation voltage | VCEsat | | 200 | 600 | mV | IC = 100 mA; IB = 5 mA; Tj = 25 °C | 3 |+| base-emitter voltage | VBE | 580 | 660 | 700 | mV | VCE = 5 V; IC = 2 mA; Tj = 25 °C [2] | 3 |+| base-emitter voltage | VBE | | | 770 | mV | VCE = 5 V; IC = 10 mA; Tj = 25 °C [2] | 3 |+| transition frequency | fT | 100 | | | MHz | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tj = 25 °C | 3 |+| noise figure | NF | | | 4 | dB | VCE = 5 V; IC = 200 µA; RS = 2 kΩ; B = 200 Hz; f = 10 Hz to 15.7 kHz; Tj = 25 °C | 3 |+ ## CAD (KiCad official) - Symbol: `BC850B`
page.json+259@@ -133,6 +133,265 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b98ca97d7116de48",+ "rows": [+ {+ "name": "collector-base voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "open emitter",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "open base",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "emitter-base voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "open collector",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "peak collector current",+ "symbol": "ICM",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "peak base current",+ "symbol": "IBM",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "Tamb ≤ 25 °C [1]",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "[1] device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "collector-base cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VCB = 30 V; IE = 0 A; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "collector-base cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VCB = 30 V; IE = 0 A; Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "emitter-base cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VEB = 5 V; IC = 0 A; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "-",+ "min": 200,+ "typ": 290,+ "max": 450,+ "conditions": "VCE = 5 V; IC = 2 mA; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": 90,+ "max": 250,+ "conditions": "IC = 10 mA; IB = 0.5 mA; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": 200,+ "max": 600,+ "conditions": "IC = 100 mA; IB = 5 mA; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "base-emitter voltage",+ "symbol": "VBE",+ "kind": "electrical",+ "unit": "mV",+ "min": 580,+ "typ": 660,+ "max": 700,+ "conditions": "VCE = 5 V; IC = 2 mA; Tj = 25 °C [2]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "base-emitter voltage",+ "symbol": "VBE",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 770,+ "conditions": "VCE = 5 V; IC = 10 mA; Tj = 25 °C [2]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "transition frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VCE = 5 V; IC = 10 mA; f = 100 MHz; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "noise figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "VCE = 5 V; IC = 200 µA; RS = 2 kΩ; B = 200 Hz; f = 10 Hz to 15.7 kHz; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],