component
BC847PN-7-F
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC847PN-7-F
Diodes Incorporated · Bipolar (BJT) · SOT-363
BC847PN-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor Q1 (BC847B type), with a peak emitter current limit IEM of 200 mA and an emitter-base voltage limit VEBO of 6 V. |
| 2 | B1 | passive | Base of the NPN transistor Q1 (BC847B type), internally isolated from the PNP transistor Q2 in the same package. |
| 3 | C2 | passive | Collector of the PNP transistor Q2 (BC857B type), with limits VCBO of -50 V, VCEO of -45 V and IC of -100 mA. |
| 4 | E2 | passive | Emitter of the PNP transistor Q2 (BC857B type), with a peak emitter current limit IEM of -200 mA and an emitter-base voltage limit VEBO of -6 V. |
| 5 | B2 | passive | Base of the PNP transistor Q2 (BC857B type), internally isolated from the NPN transistor Q1 in the same package. |
| 6 | C1 | passive | Collector of the NPN transistor Q1 (BC847B type), with limits VCBO of 50 V, VCEO of 45 V and IC of 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage (NPN Q1, BC847B type) | VCEO | 45 | V | TA=+25°C | 2 | ||
| Collector-Base Voltage (NPN Q1, BC847B type) | VCBO | 50 | V | TA=+25°C | 2 | ||
| Emitter-Base Voltage (NPN Q1, BC847B type) | VEBO | 6 | V | TA=+25°C | 2 | ||
| Collector Current (NPN Q1, BC847B type) | IC | 100 | mA | TA=+25°C | 2 | ||
| Peak Collector Current (NPN Q1, BC847B type) | ICM | 200 | mA | TA=+25°C | 2 | ||
| Peak Emitter Current (NPN Q1, BC847B type) | IEM | 200 | mA | TA=+25°C | 2 | ||
| Collector-Base Voltage (PNP Q2, BC857B type) | VCBO | -50 | V | TA=+25°C | 2 | ||
| Collector-Emitter Voltage (PNP Q2, BC857B type) | VCEO | -45 | V | TA=+25°C | 2 | ||
| Emitter-Base Voltage (PNP Q2, BC857B type) | VEBO | -6 | V | TA=+25°C | 2 | ||
| Collector Current (PNP Q2, BC857B type) | IC | -100 | mA | TA=+25°C | 2 | ||
| Peak Collector Current (PNP Q2, BC857B type) | ICM | -200 | mA | TA=+25°C | 2 | ||
| Peak Emitter Current (PNP Q2, BC857B type) | IEM | -200 | mA | TA=+25°C | 2 | ||
| Power Dissipation, Total Device | PD | 200 | mW | Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 625 | °C/W | Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -65 | 150 | °C | 2 | ||
| Collector-Base Breakdown Voltage (NPN Q1) | BVCBO | 50 | V | IC = 100µA | 3 | ||
| Collector-Emitter Breakdown Voltage (NPN Q1) | BVCEO | 45 | V | IC = 10mA | 3 | ||
| Emitter-Base Breakdown Voltage (NPN Q1) | BVEBO | 6 | V | IE = 100µA | 3 | ||
| DC Current Gain (NPN Q1) | hFE | 200 | 290 | 450 | VCE = 5.0V, IC = 2.0mA | 3 | |
| Collector-Emitter Saturation Voltage (NPN Q1) | VCE(SAT) | 90 | 250 | mV | IC = 10mA, IB = 0.5mA | 3 | |
| Collector-Emitter Saturation Voltage (NPN Q1) | VCE(SAT) | 200 | 600 | mV | IC = 100mA, IB = 5.0mA | 3 | |
| Base-Emitter Saturation Voltage (NPN Q1) | VBE(SAT) | 900 | mV | IC = 100mA, IB = 5.0mA | 3 | ||
| Base-Emitter Voltage (NPN Q1) | VBE(ON) | 580 | 700 | mV | VCE = 5.0V, IC = 2.0mA | 3 | |
| Base-Emitter Voltage (NPN Q1) | VBE(ON) | 660 | 720 | mV | VCE = 5.0V, IC = 10mA | 3 | |
| Collector-Cutoff Current (NPN Q1) | ICBO | 15 | nA | VCB = 30V | 3 | ||
| Collector-Cutoff Current (NPN Q1) | ICBO | 5 | µA | VCB = 30V, TA = +150°C | 3 | ||
| Gain Bandwidth Product (NPN Q1) | fT | 100 | 300 | MHz | VCE = 5.0V, IC = 10mA, f = 100MHz | 3 | |
| Collector-Base Capacitance (NPN Q1) | CCBO | 3.5 | 6 | pF | VCB = 10V, f = 1.0MHz | 3 | |
| Noise Figure (NPN Q1) | NF | 2 | 10 | dB | VCE = 5V, IC = 200µA, Rg = 2.0kΩ, f = 1.0kHz, f = 200Hz | 3 | |
| Collector-Base Breakdown Voltage (PNP Q2) | BVCBO | -50 | V | IC = -100µA | 4 | ||
| Collector-Emitter Breakdown Voltage (PNP Q2) | BVCEO | -45 | V | IC = -10mA | 4 | ||
| Emitter-Base Breakdown Voltage (PNP Q2) | BVEBO | -6 | V | IE = -100µA | 4 | ||
| DC Current Gain (PNP Q2) | hFE | 220 | 290 | 475 | VCE = -5.0V, IC = -2.0mA | 4 | |
| Collector-Emitter Saturation Voltage (PNP Q2) | VCE(SAT) | -75 | -300 | mV | IC = -10mA, IB = -0.5mA | 4 | |
| Collector-Emitter Saturation Voltage (PNP Q2) | VCE(SAT) | -250 | -650 | mV | IC = -100mA, IB = -5.0mA | 4 | |
| Base-Emitter Saturation Voltage (PNP Q2) | VBE(SAT) | -850 | -950 | mV | IC = -100mA, IB = -5.0mA | 4 | |
| Base-Emitter Voltage (PNP Q2) | VBE(ON) | -600 | -750 | mV | VCE = -5.0V, IC = -2.0mA | 4 | |
| Base-Emitter Voltage (PNP Q2) | VBE(ON) | -650 | -820 | mV | VCE = -5.0V, IC = -10mA | 4 | |
| Collector-Cutoff Current (PNP Q2) | ICBO | -15 | nA | VCB = -30V | 4 | ||
| Collector-Cutoff Current (PNP Q2) | ICBO | -4 | µA | VCB = -30V, TA = +150°C | 4 | ||
| Gain Bandwidth Product (PNP Q2) | fT | 100 | 200 | MHz | VCE = -5.0V, IC = -10mA, f = 100MHz | 4 | |
| Collector-Base Capacitance (PNP Q2) | CCBO | 3 | 4.5 | pF | VCB = -10V, f = 1.0MHz | 4 | |
| Noise Figure (PNP Q2) | NF | 10 | dB | VCE = -5V, IC = -200µA, Rg = 2.0kΩ, f = 1.0kHz, f = 200Hz | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
BC847PN-7-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bc847pn-7-f-etched.step/bc847pn-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc847pn-7-f.step/bc847pn-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
10065239df8ff578, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC847PN-7-F
**Diodes Incorporated** · Bipolar (BJT) · SOT-363
BC847PN-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor Q1 (BC847B type), with a peak emitter current limit IEM of 200 mA and an emitter-base voltage limit VEBO of 6 V. |
| 2 | B1 | passive | Base of the NPN transistor Q1 (BC847B type), internally isolated from the PNP transistor Q2 in the same package. |
| 3 | C2 | passive | Collector of the PNP transistor Q2 (BC857B type), with limits VCBO of -50 V, VCEO of -45 V and IC of -100 mA. |
| 4 | E2 | passive | Emitter of the PNP transistor Q2 (BC857B type), with a peak emitter current limit IEM of -200 mA and an emitter-base voltage limit VEBO of -6 V. |
| 5 | B2 | passive | Base of the PNP transistor Q2 (BC857B type), internally isolated from the NPN transistor Q1 in the same package. |
| 6 | C1 | passive | Collector of the NPN transistor Q1 (BC847B type), with limits VCBO of 50 V, VCEO of 45 V and IC of 100 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage (NPN Q1, BC847B type) | VCEO | | | 45 | V | TA=+25°C | 2 |
| Collector-Base Voltage (NPN Q1, BC847B type) | VCBO | | | 50 | V | TA=+25°C | 2 |
| Emitter-Base Voltage (NPN Q1, BC847B type) | VEBO | | | 6 | V | TA=+25°C | 2 |
| Collector Current (NPN Q1, BC847B type) | IC | | | 100 | mA | TA=+25°C | 2 |
| Peak Collector Current (NPN Q1, BC847B type) | ICM | | | 200 | mA | TA=+25°C | 2 |
| Peak Emitter Current (NPN Q1, BC847B type) | IEM | | | 200 | mA | TA=+25°C | 2 |
| Collector-Base Voltage (PNP Q2, BC857B type) | VCBO | | | -50 | V | TA=+25°C | 2 |
| Collector-Emitter Voltage (PNP Q2, BC857B type) | VCEO | | | -45 | V | TA=+25°C | 2 |
| Emitter-Base Voltage (PNP Q2, BC857B type) | VEBO | | | -6 | V | TA=+25°C | 2 |
| Collector Current (PNP Q2, BC857B type) | IC | | | -100 | mA | TA=+25°C | 2 |
| Peak Collector Current (PNP Q2, BC857B type) | ICM | | | -200 | mA | TA=+25°C | 2 |
| Peak Emitter Current (PNP Q2, BC857B type) | IEM | | | -200 | mA | TA=+25°C | 2 |
| Power Dissipation, Total Device | PD | | | 200 | mW | Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | | 625 | °C/W | Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -65 | | 150 | °C | | 2 |
| Collector-Base Breakdown Voltage (NPN Q1) | BVCBO | 50 | | | V | IC = 100µA | 3 |
| Collector-Emitter Breakdown Voltage (NPN Q1) | BVCEO | 45 | | | V | IC = 10mA | 3 |
| Emitter-Base Breakdown Voltage (NPN Q1) | BVEBO | 6 | | | V | IE = 100µA | 3 |
| DC Current Gain (NPN Q1) | hFE | 200 | 290 | 450 | | VCE = 5.0V, IC = 2.0mA | 3 |
| Collector-Emitter Saturation Voltage (NPN Q1) | VCE(SAT) | | 90 | 250 | mV | IC = 10mA, IB = 0.5mA | 3 |
| Collector-Emitter Saturation Voltage (NPN Q1) | VCE(SAT) | | 200 | 600 | mV | IC = 100mA, IB = 5.0mA | 3 |
| Base-Emitter Saturation Voltage (NPN Q1) | VBE(SAT) | | | 900 | mV | IC = 100mA, IB = 5.0mA | 3 |
| Base-Emitter Voltage (NPN Q1) | VBE(ON) | 580 | | 700 | mV | VCE = 5.0V, IC = 2.0mA | 3 |
| Base-Emitter Voltage (NPN Q1) | VBE(ON) | 660 | | 720 | mV | VCE = 5.0V, IC = 10mA | 3 |
| Collector-Cutoff Current (NPN Q1) | ICBO | | | 15 | nA | VCB = 30V | 3 |
| Collector-Cutoff Current (NPN Q1) | ICBO | | | 5 | µA | VCB = 30V, TA = +150°C | 3 |
| Gain Bandwidth Product (NPN Q1) | fT | 100 | 300 | | MHz | VCE = 5.0V, IC = 10mA, f = 100MHz | 3 |
| Collector-Base Capacitance (NPN Q1) | CCBO | | 3.5 | 6 | pF | VCB = 10V, f = 1.0MHz | 3 |
| Noise Figure (NPN Q1) | NF | | 2 | 10 | dB | VCE = 5V, IC = 200µA, Rg = 2.0kΩ, f = 1.0kHz, f = 200Hz | 3 |
| Collector-Base Breakdown Voltage (PNP Q2) | BVCBO | -50 | | | V | IC = -100µA | 4 |
| Collector-Emitter Breakdown Voltage (PNP Q2) | BVCEO | -45 | | | V | IC = -10mA | 4 |
| Emitter-Base Breakdown Voltage (PNP Q2) | BVEBO | -6 | | | V | IE = -100µA | 4 |
| DC Current Gain (PNP Q2) | hFE | 220 | 290 | 475 | | VCE = -5.0V, IC = -2.0mA | 4 |
| Collector-Emitter Saturation Voltage (PNP Q2) | VCE(SAT) | | -75 | -300 | mV | IC = -10mA, IB = -0.5mA | 4 |
| Collector-Emitter Saturation Voltage (PNP Q2) | VCE(SAT) | | -250 | -650 | mV | IC = -100mA, IB = -5.0mA | 4 |
| Base-Emitter Saturation Voltage (PNP Q2) | VBE(SAT) | | -850 | -950 | mV | IC = -100mA, IB = -5.0mA | 4 |
| Base-Emitter Voltage (PNP Q2) | VBE(ON) | -600 | | -750 | mV | VCE = -5.0V, IC = -2.0mA | 4 |
| Base-Emitter Voltage (PNP Q2) | VBE(ON) | -650 | | -820 | mV | VCE = -5.0V, IC = -10mA | 4 |
| Collector-Cutoff Current (PNP Q2) | ICBO | | | -15 | nA | VCB = -30V | 4 |
| Collector-Cutoff Current (PNP Q2) | ICBO | | | -4 | µA | VCB = -30V, TA = +150°C | 4 |
| Gain Bandwidth Product (PNP Q2) | fT | 100 | 200 | | MHz | VCE = -5.0V, IC = -10mA, f = 100MHz | 4 |
| Collector-Base Capacitance (PNP Q2) | CCBO | | 3 | 4.5 | pF | VCB = -10V, f = 1.0MHz | 4 |
| Noise Figure (PNP Q2) | NF | | | 10 | dB | VCE = -5V, IC = -200µA, Rg = 2.0kΩ, f = 1.0kHz, f = 200Hz | 4 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `BC847PN-7-F`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bc847pn-7-f-etched.step` / `bc847pn-7-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc847pn-7-f.step` / `bc847pn-7-f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586204096735432704) (6 pp, sha256 `10065239df8ff578`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc847pn-7-f-datasheet.pdf)