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BC847PN-7-F

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Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC847PN-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-363

BC847PN-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the NPN transistor Q1 (BC847B type), with a peak emitter current limit IEM of 200 mA and an emitter-base voltage limit VEBO of 6 V.
2 B1 passive Base of the NPN transistor Q1 (BC847B type), internally isolated from the PNP transistor Q2 in the same package.
3 C2 passive Collector of the PNP transistor Q2 (BC857B type), with limits VCBO of -50 V, VCEO of -45 V and IC of -100 mA.
4 E2 passive Emitter of the PNP transistor Q2 (BC857B type), with a peak emitter current limit IEM of -200 mA and an emitter-base voltage limit VEBO of -6 V.
5 B2 passive Base of the PNP transistor Q2 (BC857B type), internally isolated from the NPN transistor Q1 in the same package.
6 C1 passive Collector of the NPN transistor Q1 (BC847B type), with limits VCBO of 50 V, VCEO of 45 V and IC of 100 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (NPN Q1, BC847B type) VCEO 45 V TA=+25°C 2
Collector-Base Voltage (NPN Q1, BC847B type) VCBO 50 V TA=+25°C 2
Emitter-Base Voltage (NPN Q1, BC847B type) VEBO 6 V TA=+25°C 2
Collector Current (NPN Q1, BC847B type) IC 100 mA TA=+25°C 2
Peak Collector Current (NPN Q1, BC847B type) ICM 200 mA TA=+25°C 2
Peak Emitter Current (NPN Q1, BC847B type) IEM 200 mA TA=+25°C 2
Collector-Base Voltage (PNP Q2, BC857B type) VCBO -50 V TA=+25°C 2
Collector-Emitter Voltage (PNP Q2, BC857B type) VCEO -45 V TA=+25°C 2
Emitter-Base Voltage (PNP Q2, BC857B type) VEBO -6 V TA=+25°C 2
Collector Current (PNP Q2, BC857B type) IC -100 mA TA=+25°C 2
Peak Collector Current (PNP Q2, BC857B type) ICM -200 mA TA=+25°C 2
Peak Emitter Current (PNP Q2, BC857B type) IEM -200 mA TA=+25°C 2
Power Dissipation, Total Device PD 200 mW Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air 2
Thermal Resistance, Junction to Ambient RJA 625 °C/W Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Collector-Base Breakdown Voltage (NPN Q1) BVCBO 50 V IC = 100µA 3
Collector-Emitter Breakdown Voltage (NPN Q1) BVCEO 45 V IC = 10mA 3
Emitter-Base Breakdown Voltage (NPN Q1) BVEBO 6 V IE = 100µA 3
DC Current Gain (NPN Q1) hFE 200 290 450 VCE = 5.0V, IC = 2.0mA 3
Collector-Emitter Saturation Voltage (NPN Q1) VCE(SAT) 90 250 mV IC = 10mA, IB = 0.5mA 3
Collector-Emitter Saturation Voltage (NPN Q1) VCE(SAT) 200 600 mV IC = 100mA, IB = 5.0mA 3
Base-Emitter Saturation Voltage (NPN Q1) VBE(SAT) 900 mV IC = 100mA, IB = 5.0mA 3
Base-Emitter Voltage (NPN Q1) VBE(ON) 580 700 mV VCE = 5.0V, IC = 2.0mA 3
Base-Emitter Voltage (NPN Q1) VBE(ON) 660 720 mV VCE = 5.0V, IC = 10mA 3
Collector-Cutoff Current (NPN Q1) ICBO 15 nA VCB = 30V 3
Collector-Cutoff Current (NPN Q1) ICBO 5 µA VCB = 30V, TA = +150°C 3
Gain Bandwidth Product (NPN Q1) fT 100 300 MHz VCE = 5.0V, IC = 10mA, f = 100MHz 3
Collector-Base Capacitance (NPN Q1) CCBO 3.5 6 pF VCB = 10V, f = 1.0MHz 3
Noise Figure (NPN Q1) NF 2 10 dB VCE = 5V, IC = 200µA, Rg = 2.0kΩ, f = 1.0kHz, f = 200Hz 3
Collector-Base Breakdown Voltage (PNP Q2) BVCBO -50 V IC = -100µA 4
Collector-Emitter Breakdown Voltage (PNP Q2) BVCEO -45 V IC = -10mA 4
Emitter-Base Breakdown Voltage (PNP Q2) BVEBO -6 V IE = -100µA 4
DC Current Gain (PNP Q2) hFE 220 290 475 VCE = -5.0V, IC = -2.0mA 4
Collector-Emitter Saturation Voltage (PNP Q2) VCE(SAT) -75 -300 mV IC = -10mA, IB = -0.5mA 4
Collector-Emitter Saturation Voltage (PNP Q2) VCE(SAT) -250 -650 mV IC = -100mA, IB = -5.0mA 4
Base-Emitter Saturation Voltage (PNP Q2) VBE(SAT) -850 -950 mV IC = -100mA, IB = -5.0mA 4
Base-Emitter Voltage (PNP Q2) VBE(ON) -600 -750 mV VCE = -5.0V, IC = -2.0mA 4
Base-Emitter Voltage (PNP Q2) VBE(ON) -650 -820 mV VCE = -5.0V, IC = -10mA 4
Collector-Cutoff Current (PNP Q2) ICBO -15 nA VCB = -30V 4
Collector-Cutoff Current (PNP Q2) ICBO -4 µA VCB = -30V, TA = +150°C 4
Gain Bandwidth Product (PNP Q2) fT 100 200 MHz VCE = -5.0V, IC = -10mA, f = 100MHz 4
Collector-Base Capacitance (PNP Q2) CCBO 3 4.5 pF VCB = -10V, f = 1.0MHz 4
Noise Figure (PNP Q2) NF 10 dB VCE = -5V, IC = -200µA, Rg = 2.0kΩ, f = 1.0kHz, f = 200Hz 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BC847PN-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc847pn-7-f-etched.step / bc847pn-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847pn-7-f.step / bc847pn-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 10065239df8ff578, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF