component
BC847CW
Public Made by Adomby adom
MSKSEMI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BC847CW
MSKSEMI · Bipolar (BJT) · SOT-323
BC847CW from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the BC847CW is marked 1G, and the datasheet gives an emitter-base voltage of 6 V for the BC847W. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives a continuous collector current of 0.1 A and a collector power dissipation of 150 mW for the device. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives a collector-emitter voltage of 45 V and a collector-base voltage of 50 V for the BC847W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (BC847W) | VCBO | 50 | V | BC847W variant | 2 | ||
| Collector-emitter voltage (BC847W) | VCEO | 45 | V | BC847W variant | 2 | ||
| Emitter-base voltage (BC847W) | VEBO | 6 | V | BC847W variant | 2 | ||
| Collector current, continuous | IC | 0.1 | A | continuous | 2 | ||
| Collector power dissipation | PC | 150 | mW | 2 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction to ambient | RθJA | 833 | °C/W | junction to ambient | 2 | ||
| Collector-base breakdown voltage (BC847W) | VCBO | 50 | V | IC= 10µA, IE=0 | 3 | ||
| Collector-emitter breakdown voltage (BC847W) | VCEO | 45 | V | IC= 10mA, IB=0 | 3 | ||
| Emitter-base breakdown voltage (BC847W) | VEBO | 6 | V | IE= 1 µA, IC=0 | 3 | ||
| Collector cutoff current | ICBO | 15 | nA | VCB=30V | 3 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC=10mA, IB=0.5mA | 3 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC=100mA, IB=5mA | 3 | ||
| Base-emitter voltage | VBE(on) | 580 | 660 | 700 | mV | VCE= 5V, IC= 2mA | 3 |
| Base-emitter voltage | VBE(on) | 770 | mV | VCE= 5V, IC= 10mA | 3 | ||
| Noise figure (BC847CW) | NF | 4 | dB | VCE=5V, Ic=0.2mA, f=1KHz, RS=2KΩ, BW=200Hz | 3 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=10V, f=1MHz | 3 | ||
| Transition frequency | fT | 100 | MHz | VCE= 5 V, IC= 10mA, f=100MHz | 3 |
CAD (KiCad official)
- Symbol:
BC847CW - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bc847cw-etched.step/bc847cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc847cw.step/bc847cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
d72daf052b822cd3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC847CW
**MSKSEMI** · Bipolar (BJT) · SOT-323
BC847CW from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the BC847CW is marked 1G, and the datasheet gives an emitter-base voltage of 6 V for the BC847W. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives a continuous collector current of 0.1 A and a collector power dissipation of 150 mW for the device. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives a collector-emitter voltage of 45 V and a collector-base voltage of 50 V for the BC847W. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (BC847W) | VCBO | | | 50 | V | BC847W variant | 2 |
| Collector-emitter voltage (BC847W) | VCEO | | | 45 | V | BC847W variant | 2 |
| Emitter-base voltage (BC847W) | VEBO | | | 6 | V | BC847W variant | 2 |
| Collector current, continuous | IC | | | 0.1 | A | continuous | 2 |
| Collector power dissipation | PC | | | 150 | mW | | 2 |
| Operation junction and storage temperature range | TJ,Tstg | -55 | | 150 | °C | | 2 |
| Thermal resistance, junction to ambient | RθJA | | 833 | | °C/W | junction to ambient | 2 |
| Collector-base breakdown voltage (BC847W) | VCBO | 50 | | | V | IC= 10µA, IE=0 | 3 |
| Collector-emitter breakdown voltage (BC847W) | VCEO | 45 | | | V | IC= 10mA, IB=0 | 3 |
| Emitter-base breakdown voltage (BC847W) | VEBO | 6 | | | V | IE= 1 µA, IC=0 | 3 |
| Collector cutoff current | ICBO | | | 15 | nA | VCB=30V | 3 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.25 | V | IC=10mA, IB=0.5mA | 3 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.6 | V | IC=100mA, IB=5mA | 3 |
| Base-emitter voltage | VBE(on) | 580 | 660 | 700 | mV | VCE= 5V, IC= 2mA | 3 |
| Base-emitter voltage | VBE(on) | | | 770 | mV | VCE= 5V, IC= 10mA | 3 |
| Noise figure (BC847CW) | NF | | | 4 | dB | VCE=5V, Ic=0.2mA, f=1KHz, RS=2KΩ, BW=200Hz | 3 |
| Collector output capacitance | Cob | | | 4.5 | pF | VCB=10V, f=1MHz | 3 |
| Transition frequency | fT | | 100 | | MHz | VCE= 5 V, IC= 10mA, f=100MHz | 3 |
## CAD (KiCad official)
- Symbol: `BC847CW`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `bc847cw-etched.step` / `bc847cw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc847cw.step` / `bc847cw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590452379801198592) (6 pp, sha256 `d72daf052b822cd3`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc847cw-datasheet.pdf)