component

BC847CW

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC847CW

MSKSEMI · Bipolar (BJT) · SOT-323

BC847CW from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the BC847CW is marked 1G, and the datasheet gives an emitter-base voltage of 6 V for the BC847W.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives a continuous collector current of 0.1 A and a collector power dissipation of 150 mW for the device.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet gives a collector-emitter voltage of 45 V and a collector-base voltage of 50 V for the BC847W.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (BC847W) VCBO 50 V BC847W variant 2
Collector-emitter voltage (BC847W) VCEO 45 V BC847W variant 2
Emitter-base voltage (BC847W) VEBO 6 V BC847W variant 2
Collector current, continuous IC 0.1 A continuous 2
Collector power dissipation PC 150 mW 2
Operation junction and storage temperature range TJ,Tstg -55 150 °C 2
Thermal resistance, junction to ambient RθJA 833 °C/W junction to ambient 2
Collector-base breakdown voltage (BC847W) VCBO 50 V IC= 10µA, IE=0 3
Collector-emitter breakdown voltage (BC847W) VCEO 45 V IC= 10mA, IB=0 3
Emitter-base breakdown voltage (BC847W) VEBO 6 V IE= 1 µA, IC=0 3
Collector cutoff current ICBO 15 nA VCB=30V 3
Collector-emitter saturation voltage VCE(sat) 0.25 V IC=10mA, IB=0.5mA 3
Collector-emitter saturation voltage VCE(sat) 0.6 V IC=100mA, IB=5mA 3
Base-emitter voltage VBE(on) 580 660 700 mV VCE= 5V, IC= 2mA 3
Base-emitter voltage VBE(on) 770 mV VCE= 5V, IC= 10mA 3
Noise figure (BC847CW) NF 4 dB VCE=5V, Ic=0.2mA, f=1KHz, RS=2KΩ, BW=200Hz 3
Collector output capacitance Cob 4.5 pF VCB=10V, f=1MHz 3
Transition frequency fT 100 MHz VCE= 5 V, IC= 10mA, f=100MHz 3

CAD (KiCad official)

  • Symbol: BC847CW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc847cw-etched.step / bc847cw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847cw.step / bc847cw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 d72daf052b822cd3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF