component

BC847BLT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbc847blt1gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
bc847blt1g / README.md
History Download
Ray bc847blt1g: specified limits as data (metadata.characteristics, 23 rows from the datasheet) ff6c7ad 24d ago

BC847BLT1G

onsemi · Bipolar (BJT) · SOT-23

BC847BLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input NPN transistor base terminal; maximum emitter-base voltage rating of 6.0 V for BC847
2 EMITTER passive Transistor emitter terminal; forms the output current path with continuous collector current maximum of 100 mAdc
3 COLLECTOR output Transistor collector terminal; maximum collector-emitter voltage of 45 V and continuous collector current of 100 mAdc for BC847

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (BC847A,B,C) V(BR)CEO 45 V IC = 10 mA 2
Collector-Emitter Breakdown Voltage (BC847A,B,C) V(BR)CES 50 V IC = 10 A, VEB = 0 2
Collector-Base Breakdown Voltage (BC847A,B,C) V(BR)CBO 50 V IC = 10 A 2
Emitter-Base Breakdown Voltage (BC847A,B,C) V(BR)EBO 6 V IE = 1.0 A 2
Collector Cutoff Current ICBO 15 nA VCB = 30 V 2
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 2
DC Current Gain (BC847B) hFE 200 290 450 IC = 2.0 mA, VCE = 5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 2
Base-Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 2
Base-Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 2
Noise Figure (BC847A,B,C) NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage (BC847) VCEO 45 Vdc 1
Collector-Base Voltage (BC847) VCBO 50 Vdc 1
Emitter-Base Voltage (BC847) VEBO 6 Vdc 1
Collector Current - Continuous IC 100 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C, FR-5 board (Note 1) 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, alumina substrate (Note 2) 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 °C/W alumina substrate (Note 2) 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BC847BLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc847blt1g-etched.step / bc847blt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847blt1g.step / bc847blt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 246394072eb7ca9a, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF