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bc847blt1g: specified limits as data (metadata.characteristics, 23 rows from the datasheet)

Ray ·ff6c7ad451 ·24d ago ·parent ad1c633
2 files changed +313
README.md+30
@@ -21,6 +21,36 @@ BC847BLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Breakdown Voltage (BC847A,B,C) | V(BR)CEO | 45 |  |  | V | IC = 10 mA | 2 |+| Collector-Emitter Breakdown Voltage (BC847A,B,C) | V(BR)CES | 50 |  |  | V | IC = 10 A, VEB = 0 | 2 |+| Collector-Base Breakdown Voltage (BC847A,B,C) | V(BR)CBO | 50 |  |  | V | IC = 10 A | 2 |+| Emitter-Base Breakdown Voltage (BC847A,B,C) | V(BR)EBO | 6 |  |  | V | IE = 1.0 A | 2 |+| Collector Cutoff Current | ICBO |  |  | 15 | nA | VCB = 30 V | 2 |+| Collector Cutoff Current | ICBO |  |  | 5 | µA | VCB = 30 V, TA = 150°C | 2 |+| DC Current Gain (BC847B) | hFE | 200 | 290 | 450 |  | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 |+| Base-Emitter Voltage | VBE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Base-Emitter Voltage | VBE(on) |  |  | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 |+| Current-Gain - Bandwidth Product | fT | 100 |  |  | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 2 |+| Output Capacitance | Cobo |  |  | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 |+| Noise Figure (BC847A,B,C) | NF |  |  | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz | 2 |+| Collector-Emitter Voltage (BC847) | VCEO |  |  | 45 | Vdc |  | 1 |+| Collector-Base Voltage (BC847) | VCBO |  |  | 50 | Vdc |  | 1 |+| Emitter-Base Voltage (BC847) | VEBO |  |  | 6 | Vdc |  | 1 |+| Collector Current - Continuous | IC |  |  | 100 | mAdc |  | 1 |+| Total Device Dissipation FR-5 Board | PD |  |  | 225 | mW | TA = 25°C, FR-5 board (Note 1) | 1 |+| Thermal Resistance, Junction-to-Ambient FR-5 Board | RJA |  |  | 556 | °C/W | FR-5 board (Note 1) | 1 |+| Total Device Dissipation Alumina Substrate | PD |  |  | 300 | mW | TA = 25°C, alumina substrate (Note 2) | 1 |+| Thermal Resistance, Junction-to-Ambient Alumina Substrate | RJA |  |  | 417 | °C/W | alumina substrate (Note 2) | 1 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |+ ## CAD (KiCad official)  - Symbol: `BC847BLT1G`
page.json+283
@@ -133,6 +133,289 @@       "Package": "SOT-23",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "246394072eb7ca9a",+      "rows": [+        {+          "name": "Collector-Emitter Breakdown Voltage (BC847A,B,C)",+          "symbol": "V(BR)CEO",+          "kind": "electrical",+          "unit": "V",+          "min": 45,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 mA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector-Emitter Breakdown Voltage (BC847A,B,C)",+          "symbol": "V(BR)CES",+          "kind": "electrical",+          "unit": "V",+          "min": 50,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 A, VEB = 0",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector-Base Breakdown Voltage (BC847A,B,C)",+          "symbol": "V(BR)CBO",+          "kind": "electrical",+          "unit": "V",+          "min": 50,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Emitter-Base Breakdown Voltage (BC847A,B,C)",+          "symbol": "V(BR)EBO",+          "kind": "electrical",+          "unit": "V",+          "min": 6,+          "typ": null,+          "max": null,+          "conditions": "IE = 1.0 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector Cutoff Current",+          "symbol": "ICBO",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "VCB = 30 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector Cutoff Current",+          "symbol": "ICBO",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "VCB = 30 V, TA = 150°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "DC Current Gain (BC847B)",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "",+          "min": 200,+          "typ": 290,+          "max": 450,+          "conditions": "IC = 2.0 mA, VCE = 5.0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector-Emitter Saturation Voltage",+          "symbol": "VCE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 0.25,+          "conditions": "IC = 10 mA, IB = 0.5 mA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector-Emitter Saturation Voltage",+          "symbol": "VCE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 0.6,+          "conditions": "IC = 100 mA, IB = 5.0 mA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base-Emitter Voltage",+          "symbol": "VBE(on)",+          "kind": "electrical",+          "unit": "mV",+          "min": 580,+          "typ": 660,+          "max": 700,+          "conditions": "IC = 2.0 mA, VCE = 5.0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base-Emitter Voltage",+          "symbol": "VBE(on)",+          "kind": "electrical",+          "unit": "mV",+          "min": null,+          "typ": null,+          "max": 770,+          "conditions": "IC = 10 mA, VCE = 5.0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Current-Gain - Bandwidth Product",+          "symbol": "fT",+          "kind": "electrical",+          "unit": "MHz",+          "min": 100,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Output Capacitance",+          "symbol": "Cobo",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": null,+          "max": 4.5,+          "conditions": "VCB = 10 V, f = 1.0 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Noise Figure (BC847A,B,C)",+          "symbol": "NF",+          "kind": "electrical",+          "unit": "dB",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector-Emitter Voltage (BC847)",+          "symbol": "VCEO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 45,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Collector-Base Voltage (BC847)",+          "symbol": "VCBO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Emitter-Base Voltage (BC847)",+          "symbol": "VEBO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 6,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Collector Current - Continuous",+          "symbol": "IC",+          "kind": "absolute_maximum",+          "unit": "mAdc",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Total Device Dissipation FR-5 Board",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 225,+          "conditions": "TA = 25°C, FR-5 board (Note 1)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient FR-5 Board",+          "symbol": "RJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 556,+          "conditions": "FR-5 board (Note 1)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Total Device Dissipation Alumina Substrate",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "TA = 25°C, alumina substrate (Note 2)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient Alumina Substrate",+          "symbol": "RJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 417,+          "conditions": "alumina substrate (Note 2)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction and Storage Temperature Range",+          "symbol": "TJ, Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],