# BC846BPN

**Yangzhou Yangjie Elec Tech** · Bipolar (BJT) · SOT-363

BC846BPN from Yangzhou Yangjie Elec Tech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of NPN transistor TR1 (pins 1, 2, 6), rated VCBO 80 V, VCEO 65 V, IC 100 mA. |
| 2 | B1 | passive | Base of NPN transistor TR1, with VEBO rated at 6 V. |
| 3 | C2 | passive | Collector of PNP transistor TR2 (pins 3, 4, 5), rated VCBO -80 V, VCEO -65 V, IC -100 mA. |
| 4 | E2 | passive | Emitter of PNP transistor TR2, with VEBO rated at -6 V. |
| 5 | B2 | passive | Base of PNP transistor TR2, with hFE 200 to 450 at VCE=-5V, IC=-2mA. |
| 6 | C1 | passive | Collector of NPN transistor TR1, with collector power dissipation of 200 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage (TR1 NPN) | VCBO |  |  | 80 | V | IC=10μA,IE=0 | 2 |
| Collector-Emitter Voltage (TR1 NPN) | VCEO |  |  | 65 | V | IC =10mA,IB=0 | 2 |
| Emitter-Base Voltage (TR1 NPN) | VEBO |  |  | 6 | V | IE=10μA,IC=0 | 2 |
| Collector Current (TR1 NPN) | IC |  |  | 100 | mA |  | 2 |
| Collector Power Dissipation (TR1 NPN) | PC |  |  | 200 | mW |  | 2 |
| Junction Temperature (TR1 NPN) | Tj | -55 |  | 150 | ℃ |  | 2 |
| Storage Temperature (TR1 NPN) | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Collector-Base Voltage (TR2 PNP) | VCBO | -80 |  |  | V | IC=-10μA,IE=0 | 3 |
| Collector-Emitter Voltage (TR2 PNP) | VCEO | -65 |  |  | V | IC =-10mA,IB=0 | 3 |
| Emitter-Base Voltage (TR2 PNP) | VEBO | -6 |  |  | V | IE=-10μA,IC=0 | 3 |
| Collector Current (TR2 PNP) | IC | -100 |  |  | mA |  | 3 |
| Collector Power Dissipation (TR2 PNP) | PC |  |  | 200 | mW |  | 3 |
| Junction Temperature (TR2 PNP) | Tj | -55 |  | 150 | ℃ |  | 3 |
| Storage Temperature (TR2 PNP) | Tstg | -55 |  | 150 | ℃ |  | 3 |
| Collector-base breakdown voltage (TR1 NPN) | VCBO | 80 |  |  | V | IC=10μA,IE=0 | 2 |
| Collector-emitter breakdown voltage (TR1 NPN) | VCEO | 65 |  |  | V | IC =10mA,IB=0 | 2 |
| Emitter-base breakdown voltage (TR1 NPN) | VEBO | 6 |  |  | V | IE=10μA,IC=0 | 2 |
| Collector-Base cut-off current (TR1 NPN) | ICBO |  |  | 15 | nA | VCB=50V,IE=0 | 2 |
| Emitter-Base Cut-off current (TR1 NPN) | IEBO |  |  | 100 | nA | VEB=5V,IC=0 | 2 |
| DC current gain (TR1 NPN) | hFE | 200 |  | 450 |  | VCE=5V,IC=2mA | 2 |
| Collector-emitter saturation voltage (TR1 NPN) | VCE(sat) |  |  | 0.1 | V | IC=10mA,IB=0.5mA | 2 |
| Collector-emitter saturation voltage (TR1 NPN) | VCE(sat) |  |  | 0.3 | V | IC=100mA,IB=5mA | 2 |
| Base-emitter saturation voltage (TR1 NPN) | VBE(sat) |  |  | 0.85 | V | IC=10mA,IB=0.5mA | 2 |
| Base-emitter saturation voltage (TR1 NPN) | VBE(sat) |  |  | 1.1 | V | IC=100mA,IB=5mA | 2 |
| Base-emitter Voltage (TR1 NPN) | VBE |  |  | 0.7 | V | VCE=5V,IC=2mA | 2 |
| Base-emitter Voltage (TR1 NPN) | VBE |  |  | 0.77 | V | VCE=5V,IC=10mA | 2 |
| Transition frequency (TR1 NPN) | fT | 100 |  |  | MHz | VCE=5V,IC=10mA,f=100MHz | 2 |
| Collector-base breakdown voltage (TR2 PNP) | VCBO | -80 |  |  | V | IC=-10μA,IE=0 | 3 |
| Collector-emitter breakdown voltage (TR2 PNP) | VCEO | -65 |  |  | V | IC =-10mA,IB=0 | 3 |
| Emitter-base breakdown voltage (TR2 PNP) | VEBO | -6 |  |  | V | IE=-10μA,IC=0 | 3 |
| Collector-Base cut-off current (TR2 PNP) | ICBO | -15 |  |  | nA | VCB=-50V,IE=0 | 3 |
| Emitter-Base Cut-off current (TR2 PNP) | IEBO | -100 |  |  | nA | VEB=-6V,IC=0 | 3 |
| DC current gain (TR2 PNP) | hFE | 200 |  | 450 |  | VCE=-5V,IC=-2mA | 3 |
| Collector-emitter saturation voltage (TR2 PNP) | VCE(sat) | -0.3 |  |  | V | IC=-10mA,IB=-0.5mA | 3 |
| Collector-emitter saturation voltage (TR2 PNP) | VCE(sat) | -0.65 |  |  | V | IC=-100mA,IB=-5mA | 3 |
| Baser-emitter saturation voltage (TR2 PNP) | VBE(sat) | -0.85 |  |  | V | IC=-10mA,IB=-0.5mA | 3 |
| Baser-emitter saturation voltage (TR2 PNP) | VBE(sat) | -1.1 |  |  | V | IC=-100mA,IB=-5mA | 3 |
| Base-emitter Voltage (TR2 PNP) | VBE | -0.75 |  |  | V | VCE=-5V,IC=-2mA | 3 |
| Base-emitter Voltage (TR2 PNP) | VBE | -0.82 |  |  | V | VCE=-5V,IC=-10mA | 3 |
| Transition frequency (TR2 PNP) | fT | 100 |  |  | MHz | VCE=-5V,IC=-10mA,f=100MHz | 3 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin | ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 | 1 |

## CAD (KiCad official)

- Symbol: `BC846BPN`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bc846bpn-etched.step` / `bc846bpn-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc846bpn.step` / `bc846bpn.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](docs/bc846bpn-datasheet.pdf) (7 pp, sha256 `c0b8455af8dae16c`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bc846bpn-datasheet.pdf)