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BC846BPN

Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-363

BC846BPN from Yangzhou Yangjie Elec Tech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of NPN transistor TR1 (pins 1, 2, 6), rated VCBO 80 V, VCEO 65 V, IC 100 mA.
2 B1 passive Base of NPN transistor TR1, with VEBO rated at 6 V.
3 C2 passive Collector of PNP transistor TR2 (pins 3, 4, 5), rated VCBO -80 V, VCEO -65 V, IC -100 mA.
4 E2 passive Emitter of PNP transistor TR2, with VEBO rated at -6 V.
5 B2 passive Base of PNP transistor TR2, with hFE 200 to 450 at VCE=-5V, IC=-2mA.
6 C1 passive Collector of NPN transistor TR1, with collector power dissipation of 200 mW.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (TR1 NPN) VCBO 80 V IC=10μA,IE=0 2
Collector-Emitter Voltage (TR1 NPN) VCEO 65 V IC =10mA,IB=0 2
Emitter-Base Voltage (TR1 NPN) VEBO 6 V IE=10μA,IC=0 2
Collector Current (TR1 NPN) IC 100 mA 2
Collector Power Dissipation (TR1 NPN) PC 200 mW 2
Junction Temperature (TR1 NPN) Tj -55 150 ℃ 2
Storage Temperature (TR1 NPN) Tstg -55 150 ℃ 2
Collector-Base Voltage (TR2 PNP) VCBO -80 V IC=-10μA,IE=0 3
Collector-Emitter Voltage (TR2 PNP) VCEO -65 V IC =-10mA,IB=0 3
Emitter-Base Voltage (TR2 PNP) VEBO -6 V IE=-10μA,IC=0 3
Collector Current (TR2 PNP) IC -100 mA 3
Collector Power Dissipation (TR2 PNP) PC 200 mW 3
Junction Temperature (TR2 PNP) Tj -55 150 ℃ 3
Storage Temperature (TR2 PNP) Tstg -55 150 ℃ 3
Collector-base breakdown voltage (TR1 NPN) VCBO 80 V IC=10μA,IE=0 2
Collector-emitter breakdown voltage (TR1 NPN) VCEO 65 V IC =10mA,IB=0 2
Emitter-base breakdown voltage (TR1 NPN) VEBO 6 V IE=10μA,IC=0 2
Collector-Base cut-off current (TR1 NPN) ICBO 15 nA VCB=50V,IE=0 2
Emitter-Base Cut-off current (TR1 NPN) IEBO 100 nA VEB=5V,IC=0 2
DC current gain (TR1 NPN) hFE 200 450 VCE=5V,IC=2mA 2
Collector-emitter saturation voltage (TR1 NPN) VCE(sat) 0.1 V IC=10mA,IB=0.5mA 2
Collector-emitter saturation voltage (TR1 NPN) VCE(sat) 0.3 V IC=100mA,IB=5mA 2
Base-emitter saturation voltage (TR1 NPN) VBE(sat) 0.85 V IC=10mA,IB=0.5mA 2
Base-emitter saturation voltage (TR1 NPN) VBE(sat) 1.1 V IC=100mA,IB=5mA 2
Base-emitter Voltage (TR1 NPN) VBE 0.7 V VCE=5V,IC=2mA 2
Base-emitter Voltage (TR1 NPN) VBE 0.77 V VCE=5V,IC=10mA 2
Transition frequency (TR1 NPN) fT 100 MHz VCE=5V,IC=10mA,f=100MHz 2
Collector-base breakdown voltage (TR2 PNP) VCBO -80 V IC=-10μA,IE=0 3
Collector-emitter breakdown voltage (TR2 PNP) VCEO -65 V IC =-10mA,IB=0 3
Emitter-base breakdown voltage (TR2 PNP) VEBO -6 V IE=-10μA,IC=0 3
Collector-Base cut-off current (TR2 PNP) ICBO -15 nA VCB=-50V,IE=0 3
Emitter-Base Cut-off current (TR2 PNP) IEBO -100 nA VEB=-6V,IC=0 3
DC current gain (TR2 PNP) hFE 200 450 VCE=-5V,IC=-2mA 3
Collector-emitter saturation voltage (TR2 PNP) VCE(sat) -0.3 V IC=-10mA,IB=-0.5mA 3
Collector-emitter saturation voltage (TR2 PNP) VCE(sat) -0.65 V IC=-100mA,IB=-5mA 3
Baser-emitter saturation voltage (TR2 PNP) VBE(sat) -0.85 V IC=-10mA,IB=-0.5mA 3
Baser-emitter saturation voltage (TR2 PNP) VBE(sat) -1.1 V IC=-100mA,IB=-5mA 3
Base-emitter Voltage (TR2 PNP) VBE -0.75 V VCE=-5V,IC=-2mA 3
Base-emitter Voltage (TR2 PNP) VBE -0.82 V VCE=-5V,IC=-10mA 3
Transition frequency (TR2 PNP) fT 100 MHz VCE=-5V,IC=-10mA,f=100MHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 1

CAD (KiCad official)

  • Symbol: BC846BPN
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc846bpn-etched.step / bc846bpn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc846bpn.step / bc846bpn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256 c0b8455af8dae16c, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF