main
Ray Set visibility: public 6fd6a8d
{
  "schema_version": 1,
  "type": "component",
  "slug": "bc817-40wt1g",
  "title": "BC817-40WT1G",
  "brief": "onsemi Bipolar (BJT), SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "BC817-40WT1G",
    "manufacturer": "onsemi",
    "package": "SC-70",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "Bipolar (BJT)",
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      "digikey": "BC817-40WT1GOSTR-ND",
      "mouser": "863-BC817-40WT1G"
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        "description": "BASE terminal of the NPN general-purpose transistor; the datasheet gives no separate base-pin limit, and the Emitter−Base voltage VEBO is rated 5.0 V maximum."
      },
      {
        "number": "2",
        "name": "EMITTER",
        "type": "passive",
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      },
      {
        "number": "3",
        "name": "COLLECTOR",
        "type": "passive",
        "description": "COLLECTOR terminal of the NPN transistor, with a Collector−Emitter voltage VCEO of 45 V and continuous collector current IC of 500 mA."
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        "primary_model": "claude-haiku-5-5",
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        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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        ],
        "pages_sent": 5,
        "cost_usd": 0.0069,
        "at": "2026-11-13T11:50:07"
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      "datasheet": {
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        "pages": 5,
        "sha256": "ef219f987cc349a7",
        "source_tier": "lcsc"
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        "height_mm": 0.9,
        "height_basis": "datasheet A, nominal",
        "standoff_mm": 0.05,
        "standoff_basis": "family nominal (no datasheet A1 read)",
        "lead_width_mm": 0.27,
        "lead_width_basis": "default: 0.6 x pad width across the lead, at most 0.45 x pitch 1.30 mm; a tab 0.9 x its width (no datasheet b read)",
        "lead_thickness_mm": 0.1,
        "lead_thickness_basis": "default for pitch 1.30 mm, height 0.9 mm (no datasheet c read)"
      },
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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    "viewers": {
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        "role": "plain",
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "a6d42e2a908babc1a45cee2310f126479a9525310e03b04c990587d02373bfc4",
        "checked": "2026-11-13",
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        "sha256": "487f76062f0e5f237f3781414bae30f15d855c8726434a2f69d343cb0ad4d2e0",
        "checked": "2026-11-13",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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      "package_code": "SC-70 (SOT-323), CASE 419-04",
      "source_page": 5,
      "D": {
        "nom_mm": 2.1,
        "range_mm": [
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          2.2
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      "E1": {
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        "range_mm": [
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      "E": {
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        "range_mm": [
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      "e": {
        "nom_mm": 0.65,
        "range_mm": [
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          null
        ]
      },
      "A": {
        "nom_mm": 0.9,
        "range_mm": [
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          1
        ]
      },
      "source": "datasheet package drawing, every number found on its page (extract_pins --task dims)",
      "model_check": {
        "file": "bc817-40wt1g.step",
        "verdict": "PASS",
        "reasons": [
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      }
    }
  },
  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "SC-70",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
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          "min": null,
          "typ": null,
          "max": 45,
          "conditions": "TA = 25°C",
          "source_page": 1,
          "source": "datasheet"
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          "unit": "mAdc",
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        },
        {
          "name": "Total Device Dissipation",
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          "kind": "thermal",
          "unit": "mW",
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          "typ": null,
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          "conditions": "FR-4 board, 1 oz. Cu, 100 mm2 (Note 1)",
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          "conditions": "IE = 1.0 A",
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        {
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          "unit": "nA",
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          "unit": "",
          "min": 40,
          "typ": null,
          "max": null,
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          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Collector−Emitter Saturation Voltage",
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          "unit": "V",
          "min": null,
          "typ": null,
          "max": 0.7,
          "conditions": "IC = 500 mA, IB = 50 mA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Base−Emitter On Voltage",
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          "min": null,
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          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Current−Gain − Bandwidth Product",
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          "kind": "electrical",
          "unit": "MHz",
          "min": 100,
          "typ": null,
          "max": null,
          "conditions": "IC = 10 mA, VCE = 5.0 V, f = 100 MHz",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
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