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Contents

README

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BC817-40WT1G

onsemi · Bipolar (BJT) · SC-70

BC817-40WT1G from onsemi, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 BASE passive BASE terminal of the NPN general-purpose transistor; the datasheet gives no separate base-pin limit, and the Emitter−Base voltage VEBO is rated 5.0 V maximum.
2 EMITTER passive EMITTER terminal of the NPN transistor, with the Emitter−Base voltage VEBO rated at 5.0 V.
3 COLLECTOR passive COLLECTOR terminal of the NPN transistor, with a Collector−Emitter voltage VCEO of 45 V and continuous collector current IC of 500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SC-70
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO 45 V TA = 25°C 1
Collector−Base Voltage VCBO 50 V TA = 25°C 1
Emitter−Base Voltage VEBO 5 V TA = 25°C 1
Collector Current − Continuous IC 500 mAdc TA = 25°C 1
Total Device Dissipation PD 460 mW FR-4 board, 1 oz. Cu, 100 mm2 (Note 1) 1
Thermal Resistance, Junction-to-Ambient RJA 272 °C/W FR-4 board, 1 oz. Cu, 100 mm2 (Note 1) 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector−Emitter Breakdown Voltage V(VR)CEO 45 V IC = 10 mA 2
Collector−Emitter Breakdown Voltage V(VR)CES 50 V VEB = 0 V, IC = 10 A 2
Emitter−Base Breakdown Voltage V(VR)EBO 5 V IE = 1.0 A 2
Collector Cutoff Current ICBO 100 nA VCB = 20 V 2
Collector Cutoff Current ICBO 5 A VCB = 20 V, TA = 150°C 2
DC Current Gain hFE 250 600 IC = 100 mA, VCE = 1.0 V 2
DC Current Gain hFE 40 IC = 500 mA, VCE = 1.0 V 2
Collector−Emitter Saturation Voltage VCE(sat) 0.7 V IC = 500 mA, IB = 50 mA 2
Base−Emitter On Voltage VBE(on) 1.2 V IC = 500 mA, VCE = 1.0 V 2
Current−Gain − Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 V, f = 100 MHz 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BC817-40WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70, generated on the KiCad land (body 1.24 x 2.1 mm, terminals on the pads, 0.9 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bc817-40wt1g-etched.step / bc817-40wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc817-40wt1g.step / bc817-40wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 ef219f987cc349a7, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF