BC817-16LT3G

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  "title": "BC817-16LT3G",
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    "package": "SOT-23",
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    "category": "Transistors/Thyristors",
    "subcategory": "Bipolar (BJT)",
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      "lcsc": "C232535",
      "digikey": "BC817-16LT3GOSTR-ND",
      "mouser": "863-BC817-16LT3G"
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      },
      {
        "number": "2",
        "name": "EMITTER",
        "type": "passive",
        "description": "Emitter terminal of the NPN transistor; the datasheet rates the emitter-base voltage (VEBO) at 5.0 V maximum."
      },
      {
        "number": "3",
        "name": "COLLECTOR",
        "type": "passive",
        "description": "Collector terminal of the NPN transistor; the datasheet rates the collector-emitter voltage (VCEO) at 45 V and the continuous collector current (IC) at 500 mA."
      }
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  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
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          "name": "Collector−Emitter Breakdown Voltage",
          "symbol": "V(BR)CEO",
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        },
        {
          "name": "DC Current Gain (BC817-16)",
          "symbol": "hFE",
          "kind": "electrical",
          "unit": "",
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          "symbol": "VBE(on)",
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        },
        {
          "name": "Current−Gain − Bandwidth Product",
          "symbol": "fT",
          "kind": "electrical",
          "unit": "MHz",
          "min": 100,
          "typ": null,
          "max": null,
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        {
          "name": "Collector − Emitter Voltage",
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    "email": "[email protected]"
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