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BC817-16LT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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BC817-16LT3G

onsemi · Bipolar (BJT) · SOT-23

BC817-16LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage (VEBO) at 5.0 V maximum.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet rates the emitter-base voltage (VEBO) at 5.0 V maximum.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet rates the collector-emitter voltage (VCEO) at 45 V and the continuous collector current (IC) at 500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Breakdown Voltage V(BR)CEO 45 V IC = 10 mA 2
Collector−Emitter Breakdown Voltage V(BR)CES 50 V VEB = 0, IC = 10 A 2
Emitter−Base Breakdown Voltage V(BR)EBO 5 V IE = 1.0 A 2
Collector Cutoff Current ICBO 100 nA VCB = 20 V 2
Collector Cutoff Current ICBO 5 A VCB = 20 V, TA = 150°C 2
DC Current Gain (BC817-16) hFE 100 250 IC = 100 mA, VCE = 1.0 V 2
DC Current Gain hFE 40 IC = 500 mA, VCE = 1.0 V 2
Collector−Emitter Saturation Voltage VCE(sat) 0.7 V IC = 500 mA, IB = 50 mA 2
Base−Emitter On Voltage VBE(on) 1.2 V IC = 500 mA, VCE = 1.0 V 2
Current−Gain − Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Collector − Emitter Voltage VCEO 45 V 1
Collector − Base Voltage VCBO 50 V 1
Emitter − Base Voltage VEBO 5 V 1
Collector Current − Continuous IC 500 mAdc 1
Junction and Storage Temperature TJ, Tstg -65 150 °C 1
Total Device Dissipation FR−5 Board PD 225 mW FR−5 board (Note 1), TA = 25°C 1
Thermal Resistance, Junction−to−Ambient (FR−5 Board) RJA 556 °C/W FR−5 board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction−to−Ambient (Alumina Substrate) RJA 417 °C/W Alumina substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: BC817-16LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc817-16lt3g-etched.step / bc817-16lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc817-16lt3g.step / bc817-16lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 5edc5cf317bd3f2b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF